{"id":1865,"date":"2013-08-14T16:32:02","date_gmt":"2013-08-14T16:32:02","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/?p=1865"},"modified":"2013-08-30T18:07:08","modified_gmt":"2013-08-30T18:07:08","slug":"judy-l-hoyt","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/judy-l-hoyt\/","title":{"rendered":"Judy L. Hoyt"},"content":{"rendered":"<h3>Collaborators<\/h3>\n<ul>\n<li>Dimitri Antoniadis, EECS<\/li>\n<li>Eugene Fitzgerald, DMSE<\/li>\n<li>Pouya Hashemi, IBM<\/li>\n<li>Ammar Nayfeh, Masdar Institute<\/li>\n<li>Eli Yablonovitch, UC Berkeley<\/li>\n<li>Maggie Xia, UBC<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>Winston Chern, EECS<\/li>\n<li>Eva Polyzoeva, EECS<\/li>\n<li>Jamie Teherani, EECS (co-super\u00advised with Prof. Dimitri Antoniadis)<\/li>\n<li>Tao Yu, EECS<\/li>\n<li>underGraduate sTUDENTS<\/li>\n<li>Chen Dan Dong, EECS<\/li>\n<\/ul>\n<h3>Research Staff<\/h3>\n<ul>\n<li>Gary Riggott, Research Specialist<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>Loriann McCormick, Administrative Assistant II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>J. T. Teherani, S. Agarwal, E. Ya\u00adblonovitch, J. L. Hoyt, and D. A. Antoniadis, \u201cImpact of Quantization Energy and Gate Leakage in Bi\u00adlayer Tunneling Transistors,\u201d <em>IEEE Electron Device Letters<\/em>, vol. 34, no. 2, pp. 298 \u2013300, Feb. 2013.<\/p>\n<p>W. Chern, P. Hashemi, J.T. Tehe\u00adrani, T. Yu, Y. Dong, G. Xia, D.A. Antoniadis, and J.L. Hoyt, \u201cHigh Mobility High-\u03ba-All-Around Asym\u00admetrically-Strained Germanium Nanowire Trigate p-MOSFETs\u201d, in <em>IEDM Tech. Dig.<\/em>, 2012, pp. 387-390.<\/p>\n<p>N.A. DiLello, D.K. Johnstone, and J.L. Hoyt, \u201cCharacterization of dark current in Ge-on-Si photodiodes,\u201d <em>Journal of Applied Physics<\/em>, v 112, n 5, p 054506, Sept. 2012.<\/p>\n<p>S.A. Hadi, P. Hashemi, N. DiLello, A. Nayfeh, and J.L.Hoyt, \u201cThin film a-Si\/c-Si1-xGex\/c-Si heterojunction solar cells with Ge content up to 56%,\u201d\u00a0 <em>2012 IEEE 38th Photovol\u00adtaic Specialists Conference (PVSC)<\/em>, p 000005-8, 2012.<\/p>\n<p align=\"left\">J.T. Teherani, W. Chern, D.A. An\u00adtoniadis, J.L. Hoyt, L. Ruiz, C.D. Poweleit, and J. Menendez, \u201cEx\u00adtraction of large valence-band en\u00adergy offsets and comparison to theoretical values for strained-Si\/strained-Ge type-II heterostruc\u00adtures on relaxed SiGe substrates,\u201d <em>Physical Review B (Condensed Matter and Materials Physics)<\/em>, v 85, n 20, p 205308, 15 May 2012.<\/p>\n<p align=\"left\">S.A. Hadi, P. Hashemi, N. DiLello, A. Nayfeh, and J.L. Hoyt, \u201cEffect of c-Si1-xGex Thickness Grown by LPCVD on the Performance of Thin-Film a-Si\/c-Si1-xGex\/c-Si Heterojunction Solar Cells\u201d,\u00a0 <em>MRS Proceedings<\/em>, Volume 1447, 2012.<\/p>\n<p align=\"left\">P. Hashemi and J.L. Hoyt, \u201cHigh Hole-Mobility Strained-Ge\/Si0.6 Ge0.4 P-MOSFETs With High-K\/Metal Gate: Role of Strained-Si Cap Thickness,\u201d <em>IEEE Electron Device Letters<\/em>, v 33, n 2, p 173-5, Feb. 2012.<\/p>\n<p align=\"left\">S.A. Hadi, A. Nayfeh, P. Hashemi, and J.L. Hoyt, \u201ca-Si\/c-Si1-xGex\/c-Si heterojunction solar cells,\u201d in International Conference on Sim\u00adulation of Semiconductor Pro\u00adcesses and Devices, <em>SISPAD<\/em>, pp. 191-194, 2011.<\/p>\n<p align=\"left\">S.A. Hadi, P. Hashemi, A. Nayfeh, and J.L. Hoyt, \u201cThin-Film a-Si\/c-Si1-xGex\/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements,\u201d <em>ECS (Electro\u00adchemical Society) Transactions<\/em>, Vol. 41 (4), pp. 3-14, 2011.<\/p>\n<p align=\"left\">S. Paydavosi, K. Aidala, P. Brown, P. Hashemi, G. J. Supran, J. L. Hoyt, and V. Bulovic, &#8220;High-Den\u00adsity Charge Storage on Molecular Thin Films- Candidate Materials for High Storage Capacity Memory Cells,&#8221; <em>IEEE International Electron Device Meeting (IEDM &#8217;11)<\/em>, Washington DC, USA, December 2011.<\/p>\n<p align=\"left\">(Invited) J. Hoyt, P. Hashemi, and W. Chern, &#8220;Strained Nanowire MOSFETs,&#8221; <em>invited talk presented at the 220th Electrochemical Soci\u00adety (ECS), Session E9-ULSI Pro\u00adcess Integration<\/em>, Boston, Massa\u00adchusetts, USA, October 2011.<\/p>\n<p align=\"left\">(Invited) Pouya Hashemi, H.-S. Lee, M. A. Bhuiyan, D. A. Antoni\u00adadis, and J. L. Hoyt,\u00a0 \u201cHigh Mobility Strained Ge Channels and Gate Dielectrics for Planar and Non-Planar p-MOSFETs,\u201d <em>Mat. Res. Soc. Meeting<\/em>, San Francisco, April 27, 2011.<\/p>\n<p align=\"left\">N. A. DiLello and J.L. Hoyt, \u201cIm\u00adpact of post-metallization anneal\u00ading on Ge-on-Si photodiodes pas\u00adsivated with silicon dioxide,\u201d <em>Appl. Phys. Lett.<\/em> 99, 033508 (2011).<\/p>\n<p align=\"left\">Khilo, A; Spector, S.J.; Grein, M.E.; Nejadmalayeri, A.H.; Holzwarth, C.W.; Sander, M.Y.; Dahlem, M.S.; Peng, M.Y.; Geis, M.W.; DiLello, N.A.; Yoon, J.U.; Motamedi, A.; Orcutt, J.S.; Wang, J.P.; Sorace-Agaskar, C.M.; Popo\u00advic, M.A.; Jie Sun; Gui-Rong Zhou; Hyunil Byun; Jian Chen; Hoyt, J.L.; Smith, H.I.; Ram, R.J.; Perrott, M.; Lyszczarz, T.M.; Ippen, E.P.; Kart\u00adner, F.X, \u201cPhotonic ADC: over\u00adcoming the bottleneck of electronic jitter\u201d, <em>Optics Express<\/em>, v 20, n 4, p 4454-69, 21 Nov. 2011.<\/p>\n<p align=\"left\">P. Hashemi, J.T. Teherani, and J.L. Hoyt, &#8220;Investigation of Hole Mobility in Gate-All-Around Si Nanowire p-MOSFETs with High-k\/Metal-Gate: Effects of Hydrogen Thermal Annealing and Nanowire Shape,&#8221; <em>International Electron De\u00advice Meeting (IEDM 2010)<\/em>, San Francisco, USA, Session 34.5 De\u00adcember 2010.<\/p>\n<p>M. Kim, P. Hashemi, and J.L. Hoyt, \u201cIncreased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth,\u201d <em>Appl. Phys. Lett.<\/em>, 97, 262106 (2010).<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Semiconductor devices. Fabrication and device physics of silicon-based heterostructures and nanostructures.  High mobility Si and Ge-channel MOSFETs, nanowire FETs, novel transistor structures, silicon based photovoltaics, and silicon-germanium photodetectors for electronic\/photonic integrated circuits. <\/p>\n","protected":false},"author":370,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[11449],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1865"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1865"}],"version-history":[{"count":5,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1865\/revisions"}],"predecessor-version":[{"id":2471,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1865\/revisions\/2471"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media?parent=1865"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/categories?post=1865"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/tags?post=1865"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}