{"id":1812,"date":"2013-08-14T00:03:02","date_gmt":"2013-08-14T00:03:02","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/?p=1812"},"modified":"2013-08-14T16:38:34","modified_gmt":"2013-08-14T16:38:34","slug":"dimitri-a-antoniadis","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/dimitri-a-antoniadis\/","title":{"rendered":"Dimitri A. Antoniadis"},"content":{"rendered":"<h3>Collaborators<\/h3>\n<ul>\n<li>T. Equi, FCRP Materials, Structures, and Devices Focus Center, Executive Director<\/li>\n<li>L. Wei, Post-Doctoral Fellow<\/li>\n<li>S. Rakheja, Post-Doctoral Fellow<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>J. Teherani, Res. Asst., EECS<\/li>\n<li>J. Lin, Res. Asst., EECS<\/li>\n<li>U. Radhakrishna, Res. Asst., EECS<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>L. McCormick, Admin. Asst. II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p align=\"left\">Kim, D.-H.; del Alamo, J. A.; Antoniadis, D. A.; Li, J.; Kuo, J.-M.; Pinsukanjana, P.; Kao, Y.-C.; Chen, P.; Papavasiliou, A.; King, C.; Regan, E.; Urteaga, M.; Brar, B.; Kim, T.-W. \u201cL<sub>g<\/sub>=60 nm recessed In<sub>0.7<\/sub>Ga<sub>0.3<\/sub>As metal-oxide-semiconductor field-effect transistors with Al<sub>2<\/sub>O<sub>3<\/sub> insulator\u201d, <i>Applied Phys. Lett.<\/i>, pp. 223507 &#8211; 223507-4, 2012.<\/p>\n<p align=\"left\">Teherani, J.T., S. Agarwal, E. Yablonovitch, J. L. Hoyt, and D. A. Antoniadis, &#8221; Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors&#8221;, <i>IEEE Electron Dev. Lett.,<\/i> Vol. 34, pp. 298-300, \u00a02013.<\/p>\n<p align=\"left\">Luo, J., L. Wei, C.-S. Lee, A. D. Franklin, X. Guan, E. Pop, D. A. Antoniadis, and H.-P. Wong, &#8221; Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length,&#8221; <i>IEEE Transaction Electr. Dev. <\/i>\u00a02013.<\/p>\n<p align=\"left\">Xiao Gong, Genquan Han ; Fan Bai ; Shaojian Su ; Pengfei Guo ; Yue Yang ; Ran Cheng ; Dongliang Zhang ; Guangze Zhang ; Chunlai Xue ; Buwen Cheng ; Jisheng Pan ; Zheng Zhang ; Eng Soon Tok ; Antoniadis, D. ; Yee-Chia Yeo, &#8221; Germanium\u2013Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 <sup>o<\/sup>C Si<sub>2<\/sub>H<sub>6<\/sub> Passivation&#8221;,\u00a0 <i>IEEE Electron Dev. Lett.,<\/i> Vol. 34, pp. 339-341,\u00a0 2013.<\/p>\n<p align=\"left\">A. Majumdar, and D. A. Antoniadis, \u201cPossible Observation of Ballistic Contact Resistance in Wide Silicon MOSFETs \u201c, <i>70<sup>th<\/sup> IEEE Device Research Conference<\/i>, pp. 197-198, June 2012.<\/p>\n<p align=\"left\">U. Radhakrishna, L. Wei, D.-S. Lee, T. Palacios and D. A.\u00a0 Antoniadis, \u201cPhysics-based GaN HEMT Transport and Charge Model: Experimental Verification and Performance Projection\u201d, <i>Proc.<\/i> <i>International Electron Devices Meeting (IEDM),<\/i> pp. 319-322, 2012.<\/p>\n<p align=\"left\">W. Chern, P. Hashemi, J. T. Teherani, T. Yu, Y. Dong, G. Xia, D. A. Antoniadis and J. L. Hoyt, \u201cHigh Mobility High-\u03ba-All-Around Asymmetrically-Strained Germanium Nanowire Trigate p-MOSFETs\u201d, <i>Proc.<\/i> <i>International Electron Devices Meeting (IEDM),<\/i> pp. 387-390, 2012.<\/p>\n<p align=\"left\">J. Lin, D. A. Antoniadis, and J. A. del Alamo, \u201cSub-30 nm InAs Quantum-Well MOSFETs with Self-aligned Metal Contacts and Sub-1 nm EOT HfO<sub>2<\/sub> Insulator\u201d, <i>Proc.<\/i> <i>International Electron Devices Meeting (IEDM),<\/i> pp. 357-360, 2012.<\/p>\n<p align=\"left\">A. Majumdar,\u00a0 S. Bangsaruntip, G. M. Cohen, L. M. Gignac, M. Guillorn, M. M. Frank, J. W. Sleight and D. A. Antoniadis, \u201cRoom-Temperature Carrier Transport in High Performance Short-Channel Silicon Nanowire MOSFETs\u201d, <i>Proc.<\/i> <i>International Electron Devices Meeting (IEDM),<\/i> pp. 179-182, 2012.<\/p>\n<p>L. Yu, O. Mysore, L. Wei, L. Daniel, D. A. Antoniadis, I. Elfadel and D. Boning, \u201cAn Ultra-Compact Virtual Source FET Model for Deeply-Scaled Devices: Parameter Extraction and Validation for Standard Cell Libraries and Digital Circuits\u201d, ASP-DAC 2013.<\/p>\n<p>Yu, L., L. Wei, D. A. Antoniadis, E. Ibrahim, and D. Boning, \u201cStatistical Modeling wit the Virtual Source MOSFET Model,\u201d <i>Proceedings of Design, Automation &amp; Test in Europe Conferenc and Exhibition (DATE), <\/i>pp. 1454-1457, 2013.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Collaborators T. Equi, FCRP Materials, Structures, and Devices Focus Center, Executive Director L. Wei, Post-Doctoral Fellow S. Rakheja, Post-Doctoral Fellow&#8230;<\/p>\n","protected":false},"author":370,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[39],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1812"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1812"}],"version-history":[{"count":3,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1812\/revisions"}],"predecessor-version":[{"id":1960,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/posts\/1812\/revisions\/1960"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media?parent=1812"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/categories?post=1812"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/tags?post=1812"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}