{"id":1265,"date":"2013-07-25T18:27:15","date_gmt":"2013-07-25T18:27:15","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/?p=1265"},"modified":"2013-07-25T18:27:33","modified_gmt":"2013-07-25T18:27:33","slug":"optimizing-emitter-to-absorber-area-ratio-for-improved-efficiency-in-planar-solar-thermophotovoltaics","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/optimizing-emitter-to-absorber-area-ratio-for-improved-efficiency-in-planar-solar-thermophotovoltaics\/","title":{"rendered":"Optimizing Emitter-to-Absorber Area Ratio for Improved Efficiency in Planar Solar Thermophotovoltaics"},"content":{"rendered":"

Solar thermophotovoltaic (STPV) devices have the potential to overcome the Shockley-Queisser limit by converting solar radiation to a narrow-band thermal emission matched to the spectral response of a photovoltaic (PV) cell[1<\/a>]<\/sup>,[2<\/a>]<\/sup>. However, limiting the influence of non-idealities of the individual STPV components (absorber\/emitter\/PV) through an understanding of the highly coupled energy conversion process is needed to approach high efficiencies. Although reported TPV efficiencies (thermal-to-electric) have exceeded 10%[3<\/a>]<\/sup>, measured overall STPV conversion efficiencies are below 1%[4<\/a>]<\/sup>,[5<\/a>]<\/sup>. One of the most prohibitive aspects of this system can be the thermal transfer efficiency due to the high temperature operation of the device.<\/p>\n

In this work, we designed an experimental system for characterizing high-temperature planar STPVs, schematically shown in Figure 1, aimed to bridge the gap between potential and measured STPV performance. We show how increasing the emitter-to-absorber area ratio (AR) can compensate for non-ideal spectral selectivity on the absorber side. This concept was implemented in planar devices through a process of seeded growth of vertically aligned multi-walled carbon nanotube forests on smooth tungsten surfaces (shown in Figure 2). The TPV-side of the system is composed of a one-dimensional Si\/SiO2<\/sub> photonic crystal emitter (1D PhC) paired with a low band-gap PV cell (InGaAsSb). With a 4:1 emitter-to-absorber area ratio (AR 4), we experimentally demonstrate a two-fold increase in thermal transfer efficiency (relative to AR 1) and a significant boost in STPV performance leading to efficiencies exceeding 2%.<\/p>\n\n\t\t