{"id":1143,"date":"2013-07-25T18:26:14","date_gmt":"2013-07-25T18:26:14","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/?p=1143"},"modified":"2013-08-14T20:41:49","modified_gmt":"2013-08-14T20:41:49","slug":"high-performance-near-infrared-light-emitting-devices-using-core-shell-pbs-cds-colloidal-quantum-dots","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/high-performance-near-infrared-light-emitting-devices-using-core-shell-pbs-cds-colloidal-quantum-dots\/","title":{"rendered":"High-performance Near-infrared Light-emitting Devices using Core-shell (PbS-CdS) Colloidal Quantum-dots"},"content":{"rendered":"

Near-infrared light sources integrated at room temperature with any planar surface could be realized by harnessing the broad spectral tunability, high brightness, and solution-processability of colloidal quantum-dots (QDs)[1<\/a>]<\/sup>. Yet the performance of near-infrared quantum-dot light-emitting devices (NIR QD-LEDs) has remained relatively low until now[1<\/a>]<\/sup>. Here we show that PbS-CdS core-shell QDs, synthesized via a Pb-to-Cd cation-exchange reaction[2<\/a>]<\/sup> (Figure 1, inset), enhance the peak external quantum efficiency (EQE) of PbS core-only control devices by 50- to 100-fold, up to 4.3 \u00b1 0.3% (Figure 2). By incorporating the core-shell QDs into the novel organic-QD-inorganic hybrid NIR QD-LED architecture depicted in Figure 1, \u201cturn-on\u201d voltages are lowered by 0.6 \u00b1 0.2 V, and per-amp radiant intensities are increased by up to 150 times. Peak EQEs and power conversion efficiencies are more than double those of previous QD-LEDs emitting at wavelengths beyond 1 \u03bcm[3<\/a>]<\/sup> and are comparable with those of commercial NIR LEDs. We demonstrate that the primary origin of the performance enhancement is passivation of PbS cores by CdS shells against in situ<\/i> photoluminescence quenching, suggesting that core-shell QDs may become a mainstay of high-efficiency NIR QD-LEDs.<\/p>\n

Electrically-driven and wavelength-selectable NIR light sources that can be deposited on any substrate and at lower cost than existing (usually epitaxially grown) NIR-emitters have the potential to enhance existing technologies and to trigger the development of new ones[1<\/a>]<\/sup>. Beneficiaries could include optical telecommunications and computing, bio-medical imaging, on-chip bio(sensing) and spectroscopy, night-time surveillance, and other security applications.<\/p>\n\n\t\t