{"id":1122,"date":"2013-07-25T18:26:15","date_gmt":"2013-07-25T18:26:15","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/?p=1122"},"modified":"2013-10-07T15:09:44","modified_gmt":"2013-10-07T15:09:44","slug":"recombination-dynamics-of-charge-carriers-in-nanostructured-solar-cells","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/recombination-dynamics-of-charge-carriers-in-nanostructured-solar-cells\/","title":{"rendered":"Recombination Dynamics of Charge Carriers in Nanostructured Solar Cells"},"content":{"rendered":"
Nanostructured solar cells attract increasing attention as a promising photovoltaic (PV) technology[1<\/a>]<\/sup>. Generation of free charge carriers in nanostructured PV devices occurs at the electron donor-acceptor interface, analogous to a pn-junction interface in traditional crystalline Si solar cells. Recombination at this interface constitutes a major pathway of charge carrier loss. Characterizing and controlling recombination dynamics are key to informing design of novel device architectures. Recombination parameters also enable comparisons between different device architectures.<\/p>\n