{"id":929,"date":"2013-06-27T19:14:01","date_gmt":"2013-06-27T19:14:01","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/files\/2013\/06\/guo_fets-01.png"},"modified":"2013-06-27T19:14:01","modified_gmt":"2013-06-27T19:14:01","slug":"guo_fets-01","status":"inherit","type":"attachment","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/enhancementof-antimonide-based-p-channel-fets-using-process-induced-strain\/guo_fets-01\/","title":{"rendered":"Figure 1"},"author":370,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"description":{"rendered":"<p class=\"attachment\"><a href='https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01.png' rel=\"lightbox[929]\"><img width=\"300\" height=\"220\" src=\"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01-300x220.png\" class=\"attachment-medium size-medium\" alt=\"\" loading=\"lazy\" srcset=\"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01-300x220.png 300w, https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01-220x161.png 220w, https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01.png 604w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/a><\/p>\n"},"caption":{"rendered":"<p>Figure 1: Output characteristics of In0.41Ga0.59Sb pFET with Lg = 0.5 \u03bcm fabricated with a stressed nitride layer. The device shows good saturation characteristics. The large gate leakage is under investigation.<\/p>\n"},"alt_text":"","media_type":"image","mime_type":"image\/png","media_details":{"width":604,"height":443,"file":"2013\/06\/guo_fets-01.png","sizes":{"thumbnail":{"file":"guo_fets-01-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01-150x150.png"},"medium":{"file":"guo_fets-01-300x220.png","width":300,"height":220,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01-300x220.png"},"post-thumbnail":{"file":"guo_fets-01-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01-150x150.png"},"abstract-thumb":{"file":"guo_fets-01-220x161.png","width":220,"height":161,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01-220x161.png"},"full":{"file":"guo_fets-01.png","width":604,"height":443,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01.png"}},"image_meta":{"aperture":0,"credit":"","camera":"","caption":"","created_timestamp":0,"copyright":"","focal_length":0,"iso":0,"shutter_speed":0,"title":""}},"post":928,"source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/guo_fets-01.png","_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media\/929"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/attachment"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=929"}]}}