{"id":1973,"date":"2013-07-16T22:34:26","date_gmt":"2013-07-16T22:34:26","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/files\/2013\/07\/guo_breakdownhemts01.png"},"modified":"2013-07-16T22:34:26","modified_gmt":"2013-07-16T22:34:26","slug":"guo_breakdownhemts01","status":"inherit","type":"attachment","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/breakdown-voltage-of-high-voltage-gan-fets\/guo_breakdownhemts01\/","title":{"rendered":"Figure 1"},"author":370,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"description":{"rendered":"

\"\"<\/a><\/p>\n"},"caption":{"rendered":"

Figure 1: Breakdown voltage measurement using the drain current injection technique (ID = 1 mA\/mm). The inset shows the circuit diagram of this technique. As the device is turned off, we observe the onset of channel breakdown before gate breakdown. This phenomenon is typical for short-channel devices. <\/p>\n"},"alt_text":"","media_type":"image","mime_type":"image\/png","media_details":{"width":1414,"height":1019,"file":"2013\/07\/guo_breakdownhemts01.png","sizes":{"thumbnail":{"file":"guo_breakdownhemts01-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/guo_breakdownhemts01-150x150.png"},"medium":{"file":"guo_breakdownhemts01-300x216.png","width":300,"height":216,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/guo_breakdownhemts01-300x216.png"},"large":{"file":"guo_breakdownhemts01-1024x737.png","width":1024,"height":737,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/guo_breakdownhemts01-1024x737.png"},"post-thumbnail":{"file":"guo_breakdownhemts01-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/guo_breakdownhemts01-150x150.png"},"abstract-thumb":{"file":"guo_breakdownhemts01-220x158.png","width":220,"height":158,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/guo_breakdownhemts01-220x158.png"},"full":{"file":"guo_breakdownhemts01.png","width":1414,"height":1019,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/guo_breakdownhemts01.png"}},"image_meta":{"aperture":0,"credit":"","camera":"","caption":"","created_timestamp":0,"copyright":"","focal_length":0,"iso":0,"shutter_speed":0,"title":""}},"post":1971,"source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/guo_breakdownhemts01.png","_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media\/1973"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/attachment"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1973"}]}}