{"id":1481,"date":"2013-07-05T21:27:30","date_gmt":"2013-07-05T21:27:30","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/files\/2013\/07\/yu_mos201.png"},"modified":"2013-07-05T21:27:30","modified_gmt":"2013-07-05T21:27:30","slug":"yu_mos201","status":"inherit","type":"attachment","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/electronics-on-mos2-and-other-2d-semiconductors\/yu_mos201\/","title":{"rendered":"Figure 1"},"author":370,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"description":{"rendered":"

\"\"<\/a><\/p>\n"},"caption":{"rendered":"

Figure 1: (a) Optical image of CVD-grown WSe2 flakes directly grown on SiO2\/Si substrate and the back-gated devices on the flake. The triangular shape is consistent with the lattice crystal structure of WSe2 and indicates the high quality of the synthesized sample. (b) Photoluminescence signal mapping of WSe2 flakes. The darker triangle in the center demonstrates thicker islands. (c) Transfer properties of CVD WSe2 back gate devices in linear scale (left) and similog scale (right). Electrons conduct at the high positive back gate voltage region, and holes conduct at the negative bias region. (d) Output performance of WSe2 FET with different back gate bias. <\/p>\n"},"alt_text":"","media_type":"image","mime_type":"image\/png","media_details":{"width":750,"height":588,"file":"2013\/07\/yu_mos201.png","sizes":{"thumbnail":{"file":"yu_mos201-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/yu_mos201-150x150.png"},"medium":{"file":"yu_mos201-300x235.png","width":300,"height":235,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/yu_mos201-300x235.png"},"post-thumbnail":{"file":"yu_mos201-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/yu_mos201-150x150.png"},"abstract-thumb":{"file":"yu_mos201-220x172.png","width":220,"height":172,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/yu_mos201-220x172.png"},"full":{"file":"yu_mos201.png","width":750,"height":588,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/yu_mos201.png"}},"image_meta":{"aperture":0,"credit":"","camera":"","caption":"","created_timestamp":0,"copyright":"","focal_length":0,"iso":0,"shutter_speed":0,"title":""}},"post":1479,"source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/07\/yu_mos201.png","_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media\/1481"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/attachment"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1481"}]}}