{"id":1171,"date":"2013-06-28T19:38:27","date_gmt":"2013-06-28T19:38:27","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/files\/2013\/06\/wu_ganreliability02.jpg"},"modified":"2013-06-28T19:38:27","modified_gmt":"2013-06-28T19:38:27","slug":"wu_ganreliability02","status":"inherit","type":"attachment","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/degradation-of-gan-hemts-under-high-power-and-high-temperature-conditions\/wu_ganreliability02\/","title":{"rendered":"Figure 2"},"author":370,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"description":{"rendered":"

\"\"<\/a><\/p>\n"},"caption":{"rendered":"

Figure 2: Degradation of drain current and drain resistance in a step-temperature stress experiment under high-power bias. Both show thermally activated behavior. The extracted activation energies for permanent IDmax and RD degradations are 0.93 eV and 0.95 eV, respectively. The experiment setup differs from the one in Figure 1 in that two temperature ramps from 50\u00b0C to 220\u00b0C with a step of 20\u00b0C (not shown) were first carried out in order to bring IGoff degradation into saturation, and the device again was characterized at 50\u00b0C. Similar to the experiment in Figure 1, IDmax degradation occurs only after IGoff degradation is saturated.<\/p>\n"},"alt_text":"","media_type":"image","mime_type":"image\/jpeg","media_details":{"width":3300,"height":2550,"file":"2013\/06\/wu_ganreliability02.jpg","sizes":{"thumbnail":{"file":"wu_ganreliability02-150x150.jpg","width":150,"height":150,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability02-150x150.jpg"},"medium":{"file":"wu_ganreliability02-300x231.jpg","width":300,"height":231,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability02-300x231.jpg"},"large":{"file":"wu_ganreliability02-1024x791.jpg","width":1024,"height":791,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability02-1024x791.jpg"},"post-thumbnail":{"file":"wu_ganreliability02-150x150.jpg","width":150,"height":150,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability02-150x150.jpg"},"abstract-thumb":{"file":"wu_ganreliability02-220x170.jpg","width":220,"height":170,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability02-220x170.jpg"},"full":{"file":"wu_ganreliability02.jpg","width":3300,"height":2550,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability02.jpg"}},"image_meta":{"aperture":0,"credit":"","camera":"","caption":"","created_timestamp":0,"copyright":"","focal_length":0,"iso":0,"shutter_speed":0,"title":""}},"post":1167,"source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability02.jpg","_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media\/1171"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/attachment"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1171"}]}}