{"id":1170,"date":"2013-06-28T19:38:17","date_gmt":"2013-06-28T19:38:17","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/files\/2013\/06\/wu_ganreliability01.jpg"},"modified":"2013-06-28T19:38:17","modified_gmt":"2013-06-28T19:38:17","slug":"wu_ganreliability01","status":"inherit","type":"attachment","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/degradation-of-gan-hemts-under-high-power-and-high-temperature-conditions\/wu_ganreliability01\/","title":{"rendered":"Figure 1"},"author":370,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"description":{"rendered":"

\"\"<\/a><\/p>\n"},"caption":{"rendered":"

Figure 1: Degradation of gate leakage current IGoff during high-power state stress in a step-temperature experiment from 50\u00b0C to 230\u00b0C and when the device characterization is conducted at 50\u00b0C. The numerical labels next to the data indicate the base plate temperature. A sudden increase in IGoff occurs at a base temperature stress of 170\u00b0C.<\/p>\n"},"alt_text":"","media_type":"image","mime_type":"image\/jpeg","media_details":{"width":3201,"height":2450,"file":"2013\/06\/wu_ganreliability01.jpg","sizes":{"thumbnail":{"file":"wu_ganreliability01-150x150.jpg","width":150,"height":150,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability01-150x150.jpg"},"medium":{"file":"wu_ganreliability01-300x229.jpg","width":300,"height":229,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability01-300x229.jpg"},"large":{"file":"wu_ganreliability01-1024x783.jpg","width":1024,"height":783,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability01-1024x783.jpg"},"post-thumbnail":{"file":"wu_ganreliability01-150x150.jpg","width":150,"height":150,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability01-150x150.jpg"},"abstract-thumb":{"file":"wu_ganreliability01-220x168.jpg","width":220,"height":168,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability01-220x168.jpg"},"full":{"file":"wu_ganreliability01.jpg","width":3201,"height":2450,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability01.jpg"}},"image_meta":{"aperture":0,"credit":"","camera":"","caption":"","created_timestamp":0,"copyright":"","focal_length":0,"iso":0,"shutter_speed":0,"title":""}},"post":1167,"source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/wu_ganreliability01.jpg","_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media\/1170"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/attachment"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1170"}]}}