{"id":1152,"date":"2013-06-28T19:18:05","date_gmt":"2013-06-28T19:18:05","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/files\/2013\/06\/teherani_transistors_02.png"},"modified":"2013-06-28T19:18:05","modified_gmt":"2013-06-28T19:18:05","slug":"teherani_transistors_02","status":"inherit","type":"attachment","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/quantization-in-bilayer-tunneling-transistors\/teherani_transistors_02\/","title":{"rendered":"Figure 2"},"author":370,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"description":{"rendered":"

\"\"<\/a><\/p>\n"},"caption":{"rendered":"

Figure 2: Solid lines indicate the body voltage required to align the electron and hole eigenstates (required for the onset of band-to-band tunneling). A thin body thickness requires a large body voltage due to the increased confinement of electrons and holes. Dotted lines indicate the body-voltage efficiency\u2014the change in the energy overlap of the electron and hole confined states for a change in the body voltage. The body-voltage efficiency is less than one because increasing the body voltage increases the confinement energy of electrons and holes.<\/p>\n"},"alt_text":"","media_type":"image","mime_type":"image\/png","media_details":{"width":960,"height":720,"file":"2013\/06\/teherani_transistors_02.png","sizes":{"thumbnail":{"file":"teherani_transistors_02-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_02-150x150.png"},"medium":{"file":"teherani_transistors_02-300x225.png","width":300,"height":225,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_02-300x225.png"},"post-thumbnail":{"file":"teherani_transistors_02-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_02-150x150.png"},"abstract-thumb":{"file":"teherani_transistors_02-220x165.png","width":220,"height":165,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_02-220x165.png"},"full":{"file":"teherani_transistors_02.png","width":960,"height":720,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_02.png"}},"image_meta":{"aperture":0,"credit":"","camera":"","caption":"","created_timestamp":0,"copyright":"","focal_length":0,"iso":0,"shutter_speed":0,"title":""}},"post":1150,"source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_02.png","_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media\/1152"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/attachment"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1152"}]}}