{"id":1151,"date":"2013-06-28T19:18:03","date_gmt":"2013-06-28T19:18:03","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/files\/2013\/06\/teherani_transistors_01.png"},"modified":"2013-06-28T19:18:03","modified_gmt":"2013-06-28T19:18:03","slug":"teherani_transistors_01","status":"inherit","type":"attachment","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/quantization-in-bilayer-tunneling-transistors\/teherani_transistors_01\/","title":{"rendered":"Figure 1"},"author":370,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"description":{"rendered":"

\"\"<\/a><\/p>\n"},"caption":{"rendered":"

Figure 1: (a) Electron-hole bilayer TFET structure. (b) Structure with bias and current flow. Red arrows indicate current path. A positively biased top gate attracts electrons while a negatively biased bottom gate attracts holes. Vertical band-to-band tunneling (BTBT) takes place when sufficient voltage is applied across the device so that the electron and hole eigenstates overlap in energy. (c) Energy band diagram across cut shown in (a). A triangular well forms near the top gate for electrons and near the bottom gate for holes. (d) Potential barrier problem solved analytically. <\/p>\n"},"alt_text":"","media_type":"image","mime_type":"image\/png","media_details":{"width":960,"height":720,"file":"2013\/06\/teherani_transistors_01.png","sizes":{"thumbnail":{"file":"teherani_transistors_01-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_01-150x150.png"},"medium":{"file":"teherani_transistors_01-300x225.png","width":300,"height":225,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_01-300x225.png"},"post-thumbnail":{"file":"teherani_transistors_01-150x150.png","width":150,"height":150,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_01-150x150.png"},"abstract-thumb":{"file":"teherani_transistors_01-220x165.png","width":220,"height":165,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_01-220x165.png"},"full":{"file":"teherani_transistors_01.png","width":960,"height":720,"mime_type":"image\/png","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_01.png"}},"image_meta":{"aperture":0,"credit":"","camera":"","caption":"","created_timestamp":0,"copyright":"","focal_length":0,"iso":0,"shutter_speed":0,"title":""}},"post":1150,"source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/teherani_transistors_01.png","_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media\/1151"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/attachment"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1151"}]}}