{"id":1137,"date":"2013-06-27T22:46:27","date_gmt":"2013-06-27T22:46:27","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/files\/2013\/06\/piedra_gan_02.jpg"},"modified":"2013-06-27T22:46:27","modified_gmt":"2013-06-27T22:46:27","slug":"piedra_gan_02-2","status":"inherit","type":"attachment","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/gan-based-transistors-for-power-electronics\/piedra_gan_02-2\/","title":{"rendered":"Figure 2"},"author":370,"comment_status":"closed","ping_status":"closed","template":"","meta":[],"description":{"rendered":"<p class=\"attachment\"><a href='https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02.jpg' rel=\"lightbox[1137]\"><img width=\"300\" height=\"151\" src=\"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02-300x151.jpg\" class=\"attachment-medium size-medium\" alt=\"\" loading=\"lazy\" srcset=\"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02-300x151.jpg 300w, https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02-220x111.jpg 220w, https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02.jpg 778w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/a><\/p>\n"},"caption":{"rendered":"<p>Figure 2: Schematic cross section of the fabricated InAlN\/GaN HEMT with AlGaN back-barrier and corresponding breakdown voltage data.<\/p>\n"},"alt_text":"","media_type":"image","mime_type":"image\/jpeg","media_details":{"width":778,"height":394,"file":"2013\/06\/piedra_gan_02.jpg","sizes":{"thumbnail":{"file":"piedra_gan_02-150x150.jpg","width":150,"height":150,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02-150x150.jpg"},"medium":{"file":"piedra_gan_02-300x151.jpg","width":300,"height":151,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02-300x151.jpg"},"post-thumbnail":{"file":"piedra_gan_02-150x150.jpg","width":150,"height":150,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02-150x150.jpg"},"abstract-thumb":{"file":"piedra_gan_02-220x111.jpg","width":220,"height":111,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02-220x111.jpg"},"full":{"file":"piedra_gan_02.jpg","width":778,"height":394,"mime_type":"image\/jpeg","source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02.jpg"}},"image_meta":{"aperture":0,"credit":"","camera":"","caption":"","created_timestamp":0,"copyright":"","focal_length":0,"iso":0,"shutter_speed":0,"title":""}},"post":1134,"source_url":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-content\/blogs.dir\/22\/files\/2013\/06\/piedra_gan_02.jpg","_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media\/1137"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/media"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/types\/attachment"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/users\/370"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2013\/wp-json\/wp\/v2\/comments?post=1137"}]}}