{"id":6799,"date":"2012-11-01T17:09:06","date_gmt":"2012-11-01T17:09:06","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/?p=6799"},"modified":"2012-11-01T17:13:46","modified_gmt":"2012-11-01T17:13:46","slug":"photoactuated-ultrafast-silicon-nanostructured-electron-sources-for-coherent-x-ray-generation","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/photoactuated-ultrafast-silicon-nanostructured-electron-sources-for-coherent-x-ray-generation\/","title":{"rendered":"Photoactuated Ultrafast Silicon Nanostructured Electron Sources for Coherent X-ray Generation"},"content":{"rendered":"

A collaboration of RLE and MTL investigators is creating the scientific and engineering knowledge for a compact coherent X-ray source for phase contrast medical imaging based on inverse Compton scattering of relativistic electron bunches. The X-ray system requires a low emittance electron source that can be switched at timescales of tens of femtoseconds or faster; the focus of our work has been the design, fabrication and characterization of massive arrays of a nanostructured high aspect-ratio silicon (Si) structures to implement low-emittance and high-brightness cathodes that can be triggered very fast using laser pulses to produce spatially uniform electron bunches. Si nanostructure arrays with highly uniform sub-10 nm tip radii have been fabricated via a combined optical lithography and diffusion limited oxidation technique. The fabrication process allows nanometer-level control over the dimensions of the electron emitter structures. Figure 1 shows an array of Si tips with 1.25 \u00b5m hexagonal pitch have an average radius of curvature of 6.2 nm and standard deviation of 1.1 nm (n=29); when the radius of curvature is changed to 21.6nm, the standard deviation remains approximately the same, i.e., 1.25 nm (n=69).<\/p>\n

The tips are illuminated at a grazing incidence of roughly 84 degrees with a 1 kHz titanium sapphire laser (800 nm wavelength) with a pulse duration of 35 fs; the high electric field of the laser pulse is amplified by the silicon tips so the electrons can quantum tunnel from the tips into the vacuum. Experimental results using a time of flight spectrometer show electron beamlet array emission with 3-photon absorption. Work is ongoing to optimize the tip geometry for both low emittance and high current. We are also designing and building a new vacuum chamber to test the devices (Figure 2). The chamber will pump down to 10-7<\/sup> torr in ~15min with an anode bias up to 1100V.<\/p>\n\n\t\t