{"id":6244,"date":"2012-07-18T22:18:23","date_gmt":"2012-07-18T22:18:23","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/?p=6244"},"modified":"2012-08-10T14:14:33","modified_gmt":"2012-08-10T14:14:33","slug":"tomas-palacios","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/tomas-palacios\/","title":{"rendered":"Tom\u00e1s Palacios"},"content":{"rendered":"<h3>Collaborators<\/h3>\n<ul>\n<li>D. Antoniadis, MIT<\/li>\n<li>J. del Alamo, MIT<\/li>\n<li>P. Jarillo-Herrero, MIT<\/li>\n<li>D. Jena, University of Notre Dame<\/li>\n<li>J. Kong, MIT<\/li>\n<li>U. K. Mishra, University of California \u2013 Santa Barbara<\/li>\n<li>E. Monroy, CEA-Grenoble, France<\/li>\n<li>E. Munoz, ETSIT-UPM, Spain<\/li>\n<li>D. Perreault, MIT<\/li>\n<li>C. Thompson, MIT<\/li>\n<li>H. Xing, University of Notre Dame<\/li>\n<\/ul>\n<h3>Postdoctoral Associates<\/h3>\n<ul>\n<li>M. Azize, France<\/li>\n<li>T. Fujishima, Japan<\/li>\n<li>T. Imada, Japan<\/li>\n<li>H.-S. Lee, South Korea<\/li>\n<li>Z. Liu, Singapore<\/li>\n<li>E. Matioli, Brazil<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>F. Gao, Research Assistant<\/li>\n<li>S. Ha, Research Assistant<\/li>\n<li>A. Hsu, Research Assistant<\/li>\n<li>D. S. Lee, Research Assistant<\/li>\n<li>S. Joglekar, Research Assistant<\/li>\n<li>B. Lu, Research Assistant<\/li>\n<li>B. Mailly, Research Assistant<\/li>\n<li>M. Medlock, Research Assistant<\/li>\n<li>D. Piedra, Research Assistant<\/li>\n<li>O. I. Saadat, Research Assistant<\/li>\n<li>M. Sun, Research Assistant<\/li>\n<li>H. Wang, Research Assistant<\/li>\n<li>L. Yu, Research Assistant<\/li>\n<li>X. Zhang, Research Assistant<\/li>\n<li>Y. Zhang, Research Assistant<\/li>\n<\/ul>\n<h3>Undergraduate Students<\/h3>\n<ul>\n<li>B. Jain<\/li>\n<li>R. Luo<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>J. Baylon, Admin Assistant II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>Wang, H., A. Hsu, J. Kong, D. Antoniadis, and T. Palacios, \u201cA Compact Virtual Source Current-Voltage Model for Top and Back-Gated Graphene Field Effect Transistors,\u201d IEEE Trans. Of Electron Dev., vol. 58 (5), pp. 1523-1533, 11 pages, May 2011.<\/p>\n<p>Lee, H.-S., D. S. Lee, and T. Palacios, \u201cAlGaN\/GaN High Electron Mobility Transistors Fabricated Through a Au-free Technology,\u201d Electron Dev. Letts., vol. 32 (5), pp. 623-625, May 2011.<\/p>\n<p>Ryu, K. K., J. Roberts, E. Piner, and T. Palacios, \u201cThin-body N-face GaN Transistor Fabricated by Direct Wafer Bonding,\u201d Electron Dev. Letts., vol. 32 (7), pp. 895-897, July 2011.<\/p>\n<p>Hsu, A., H. Wang, K. K. Kim, J. Kong, and T. Palacios, \u201cHigh Frequency Performance of Graphene Transistors Grown by Chemical Vapor Deposition for Mixed Signal Applications,\u201d Jap. J. of Appl. Phys., vol. 50(7), pp. 070114, 4 pages, July 2011.<\/p>\n<p>Hsu, A., H. Wang, K. K. Kim, J. Kong, and T. Palacios, \u201cImpact of Graphene Interface Quality on Contact Resistances and RF Device Performance,\u201d Electron Device Letters, vol. 32(8), pp. 1008-1010, 3 pages, Aug. 2011.<\/p>\n<p>Xiong C., W. Pernice, K. K. Ryu, C. Schuck, K. Y. Fong, T. Palacios, and H. X. Tang, \u201cIntegrated GaN photonic circuits on silicon (100) for second harmonic generation,\u201d Optics Express, vol. 19 (11), pp. 10462-10470, 9 pages, 2011<\/p>\n<p>Wang, H., T. Taychatanapat, A. Hsu, P. Jarillo-Herrero, and T. Palacios, \u201cBN\/Graphene\/BN Transistors for RF Applications,\u201d Electron Device Letters, vol. 32(9), pp. 1209-1211, 3 pages, Sept. 2011.<\/p>\n<p>Lee, D. S., and T. Palacios, \u201c500 GHz transistors based on GaN\u2026 when and how?,\u201d Compound Semiconductor Magazine,pp.33-35, August\/September 2011. (Invited).<\/p>\n<p>Palacios, T., \u201cGraphene Electronics: Thinking Outside the Si Box,\u201d Nature Nanotechnology, vol. 6, pp. 464-465, 2 pages, 2011. (Invited).<\/p>\n<p>Lee, D. S., X. Gao, S. Gao, D. Kopp, P. Fay, and T. Palacios, \u201c300-GHz InAlN\/GaN HEMTs With InGaN Back-Barrier,\u201d IEEE Electron Dev. Letts.,vol. 32(11), pp 1525-1527, Nov. 2011.<\/p>\n<p>Lu, B., T. Palacios, D. Risbud, S. Bahl, and D. I. Anderson, \u201cExtraction of Dynamic On-Resistance in GaN Transistors under Soft- and Hard-switching Conditions,\u201d Compound Semiconductors IC Symposium, Hawaii\u2019s Big Island, HW, 4 pages, October 16-19, 2011. (Oral Presentation).<\/p>\n<p>Lee, D. S., B. Lu, M. Azize, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, \u201cImpact of GaN Channel Scaling in InAlN\/GaN HEMTs,\u201d International Electron Device Meeting, Washington DC, December 5-7, 2011. (Oral Presentation).<\/p>\n<p>Azize, M., O. Saadat, A. Hsu, M. Smith, S. Guo, S. Gradecak, and T. Palacios, \u201cHigh Electron Mobility Transistors Based on InAlN\/GaN Nanoribbons,\u201d Electron Device Letters, vol. 32(12) pp. 1680-1682, Dec. 2011<\/p>\n<p>Hoke, W. E., R. V. Chelakara, J. P. Bettencourt, T. E. Kazior, J. R. LaRoche, T. D. Kennedy, J. J. Mosca, A. Torabi, A. J. Kerr, H.-S. Lee, and T. Palacios, \u201cMonolithic Integration of Silicon CMOS and GaN Transistors in a Current Mirror Circuit,\u201d submitted to J. of Vac. Science and Tech. B, vol. 30(2) pp. 1-6, December 2011.<\/p>\n<p>Palacios, T., \u201cThe coming of age of nanowire electronics,\u201d Nature, vol. 481, pp 152-153, Jan 2012 (Invited).<\/p>\n<p>Lee, H. S., K. Ryu, M. Sun, and T. Palacios, \u201cWafer-level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs,\u201d IEEE Electron Dev. Letts.,vol. 33(2), pp 200-202, Feb. 2012.<\/p>\n<p>Lu, B., E. Matioli, and T. Palacios, \u201cTri-Gate Normally-off GaN Power MISFET,IEEE Electron Dev. Letts.,vol. 33(3), pp 360-366, March 2012.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Design, fabrication and characterization of novel electronic devices in wide bandgap semiconductors and graphene; polarization and bandgap engineering; transistors for sub-mm wave power and digital applications; new ideas for power conversion and generation; interaction of biological systems with semiconductor materials and devices; transistors based on nanowires two dimensional materials.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[60],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6244"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/comments?post=6244"}],"version-history":[{"count":6,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6244\/revisions"}],"predecessor-version":[{"id":6694,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6244\/revisions\/6694"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/media?parent=6244"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/categories?post=6244"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/tags?post=6244"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}