{"id":6210,"date":"2012-07-18T22:05:24","date_gmt":"2012-07-18T22:05:24","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/?p=6210"},"modified":"2012-07-20T16:53:35","modified_gmt":"2012-07-20T16:53:35","slug":"judy-l-hoyt","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/judy-l-hoyt\/","title":{"rendered":"Judy L. Hoyt"},"content":{"rendered":"<h3>Collaborators<\/h3>\n<ul>\n<li>Dimitri Antoniadis, EECS<\/li>\n<li>Franz Kartner, EECS<\/li>\n<li>Jose Menendez, ASU<\/li>\n<li>Ammar Nayfeh, Masdar Institute<\/li>\n<li>Ted Lyszczarz, MIT Lincoln Labs<\/li>\n<li>Jung Yoon, MIT Lincoln Labs<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>Winston Chern, EECS<\/li>\n<li>Nicole DiLello, EECS<\/li>\n<li>Eva Polyzoeva, EECS (co-supervised with Prof. Dimitri Antoniadis)<\/li>\n<li>Jamie Teherani, EECS (co-supervised with Prof. Dimitri Antoniadis)<\/li>\n<li>Tao Yu, EECS<\/li>\n<\/ul>\n<h3>Research Staff<\/h3>\n<ul>\n<li>Gary Riggott, Research Specialist<\/li>\n<li>Pouya Hashemi, Post-doctoral Scholar<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>Lori McCormick, Administrative Assistant II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p align=\"left\">P. Hashemi and J.L. Hoyt, \u201cHigh Hole-Mobility Strained-Ge\/Si0.6 Ge0.4 P-MOSFETs With High-K\/Metal Gate: Role of Strained-Si Cap Thickness,\u201d IEEE Electron Device Letters, v 33, n 2, p 173-5, Feb. 2012.<\/p>\n<p align=\"left\">S.A. Hadi, A. Nayfeh, P. Hashemi, and J.L. Hoyt, \u201ca-Si\/c-Si1-xGex\/c-Si heterojunction solar cells,\u201d in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 191-194, 2011.<\/p>\n<p align=\"left\">S.A. Hadi, P. Hashemi, A. Nayfeh, and J.L. Hoyt, \u201cThin-Film a-Si\/c-Si1-xGex\/c-Si Heterojunction Solar Cells: Design and Material Quality Requirements,\u201d ECS (Electrochemical Society) Transactions, Vol. 41 (4), pp. 3-14, 2011.<\/p>\n<p align=\"left\">S. Paydavosi, K. Aidala, P. Brown, P. Hashemi, G. J. Supran, J. L. Hoyt, and V. Bulovic, &#8220;High-Density Charge Storage on Molecular Thin Films- Candidate Materials for High Storage Capacity Memory Cells,&#8221; IEEE International Electron Device Meeting (IEDM &#8217;11), Washington DC, USA, December 2011.<\/p>\n<p align=\"left\">(Invited) J. Hoyt, P. Hashemi, and W. Chern, &#8220;Strained Nanowire MOSFETs,&#8221; invited talk presented at the 220th Electrochemical Society (ECS), Session E9-ULSI Process Integration, Boston, Massachusetts, USA, October 2011.<\/p>\n<p align=\"left\">(Invited) Pouya Hashemi, H.-S. Lee, M. A. Bhuiyan, D. A. Antoniadis, and J. L. Hoyt,\u00a0 \u201cHigh Mobility Strained Ge Channels and Gate Dielectrics for Planar and Non-Planar p-MOSFETs,\u201d Mat. Res. Soc. Meeting, San Francisco, April 27, 2011.<\/p>\n<p align=\"left\">N. A. DiLello and J.L. Hoyt, \u201cImpact of post-metallization annealing on Ge-on-Si photodiodes passivated with silicon dioxide,\u201d Appl. Phys. Lett. 99, 033508 (2011).<\/p>\n<p align=\"left\">Khilo, A; Spector, S.J.; Grein, M.E.; Nejadmalayeri, A.H.; Holzwarth, C.W.; Sander, M.Y.; Dahlem, M.S.; Peng, M.Y.; Geis, M.W.; DiLello, N.A.; Yoon, J.U.; Motamedi, A.; Orcutt, J.S.; Wang, J.P.; Sorace-Agaskar, C.M.; Popovic, M.A.; Jie Sun; Gui-Rong Zhou; Hyunil Byun; Jian Chen; Hoyt, J.L.; Smith, H.I.; Ram, R.J.; Perrott, M.; Lyszczarz, T.M.; Ippen, E.P.; Kartner, F.X, \u201cPhotonic ADC: overcoming the bottleneck of electronic jitter\u201d, Optics Express, v 20, n 4, p 4454-69, 21 Nov. 2011.<\/p>\n<p align=\"left\">P. Hashemi, J.T. Teherani, and J.L. Hoyt, &#8220;Investigation of Hole Mobility in Gate-All-Around Si Nanowire p-MOSFETs with High-k\/Metal-Gate: Effects of Hydrogen Thermal Annealing and Nanowire Shape,&#8221; International Electron De\u00advice Meeting (IEDM 2010), San Francisco, USA, Session 34.5 De\u00adcember 2010.<\/p>\n<p align=\"left\">P. Hashemi, C.D. Poweleit, M. Canonico, and J.L. Hoyt, \u201cAd\u00advanced Strained-Silicon and Core-Shell Si\/Si1-xGex Nanowires for CMOS Transport Enhancement,&#8221; ECS (Electrochemical Society) Transactions, October 2010.<\/p>\n<p align=\"left\">M. Kim, P. Hashemi, and J.L. Hoyt, Increased critical success for high Ge-content strained SiGe-on Si Using selective epitaxial growth, Appl. Phys. Lett. 97, 262106, 2010.<\/p>\n<p align=\"left\">L. Gomez, C. Ni Chleirigh, P. Hashemi, and J.L. Hoyt, &#8220;En\u00adhanced Hole Mobility in High-Ge Content Asymmetrically Strained-SiGe p-MOSFETs,&#8221; IEEE Electron Device Letters, vol. 31, no. 8, pp. 782 \u2013 784, August, 2010.<\/p>\n<p align=\"left\">Guangrui Xia and J.L. Hoyt, \u201cSi-Ge interdiffusion under oxidizing con\u00additions in epitaxial SiGe hetero\u00adstructures with high compressive stress,\u201d Applied Physics Letters, v 96, n 12, p 122107 (3 pp.), 22 March 2010.<\/p>\n<p align=\"left\">P. Hashemi, M. Kim, J. Hennessy, L. Gomez, D.A. Antoniadis and J.L. Hoyt, &#8220;Width-dependent hole mobility in top-down fabricated Si-core\/Ge-shell nanowire MOS\u00adFETs&#8221;, Appl. Phys. Lett. 96 (6), p. 063109, Feb. 2010.<\/p>\n<p align=\"left\">J.S. Orcutt, A. Khilo, M.A. Popovic, C.W. Holzwarth, H. Li, J. Sun, B. Moss, M.S. Dahlem, E.P. Ippen, J.L. Hoyt, V. Stojanovic, F.X. K\u00e4rt\u00adner, H.I. Smith, and R.J. Ram, \u201cPhotonic integration in a commer\u00adcial scaled bulk-CMOS process,\u201d Source: 2009 International Confer\u00adence on Photonics in Switching, PS &#8217;09, 2009, 2009 International Conference on Photonics in Switching, PS &#8217;09, p. 2.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Semiconductor devices. Fabrication and device physics of silicon-based heterostructures and nanostructures.  High mobility Si and Ge-channel MOSFETs, nanowire FETs, novel transistor structures, silicon based photovoltaics, and silicon-germanium photodetectors for electronic\/photonic integrated circuits. <\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[11449],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6210"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/comments?post=6210"}],"version-history":[{"count":8,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6210\/revisions"}],"predecessor-version":[{"id":6619,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6210\/revisions\/6619"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/media?parent=6210"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/categories?post=6210"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/tags?post=6210"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}