{"id":6191,"date":"2012-07-17T22:31:52","date_gmt":"2012-07-17T22:31:52","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/?p=6191"},"modified":"2012-08-02T14:19:37","modified_gmt":"2012-08-02T14:19:37","slug":"jesus-a-del-alamo","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/jesus-a-del-alamo\/","title":{"rendered":"Jes\u00fas A. del Alamo"},"content":{"rendered":"<h3>Collaborators<\/h3>\n<ul>\n<li>J. Jimenez, Triquint Semiconductor<\/li>\n<li>D.H. Kim, Teledyne Scientific<\/li>\n<li>T.-W. Kim, Sematech<\/li>\n<li>B. R. Bennett, NRL<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>A. Guo, RA EECS<\/li>\n<li>L. Guo, RA EECS<\/li>\n<li>D.H. Jin, RA, EECS<\/li>\n<li>J. Lin, RA EECS<\/li>\n<li>S. Warnock, RA EECS<\/li>\n<li>X. Zhao, RA, DMSE<strong><\/strong><\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>E. Kubicki, Administrative Assistant II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>Xia, L., B. Boos, B. R. Bennett, M. G. Ancona, and J. A. del Alamo, \u201dHole Mobility Enhancement through &lt;110&gt; Uniaxial Strain in In<sub>0.41<\/sub>Ga<sub>0.59<\/sub>Sb Quantum-Well Field-Effect transistors.\u201d Applied Physics Letters, vol. 98, 053505, 2011.<\/p>\n<p>Kharche, H., G. Klimeck, D.-H. Kim, J. A. del Alamo, and M. Luisier, \u201dMultiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs.\u201d IEEE Transactions on Electron Devices, Vol. 58, no. 7, p. 1963, July 2011.<\/p>\n<p>Xia, L., V. Tokranov, S. R. Oktyabrsky, and J. A. del Alamo, \u201dExperimental Study of &lt;100&gt; Uniaxial Stress Effects on P-channel GaAs Quantum-Well FETs.\u201d IEEE Transactions on Electron Devices, vol. 58, no. 8, p. 2597, August 2011.<\/p>\n<p>del Alamo, J. A. \u201dNanometer-scale electronics with III-V compound semiconductors.\u201d Invited Review paper. Nature, vol. 479, p. 317, 17 November 2011.<\/p>\n<p>Joh, J. and J. A. del Alamo, \u201cImpact of gate placement on RF degradation in GaN high electron mobility transistors.\u201d Microelectronics Reliability, vol. 52, no. 1, p. 33, January 2012.<\/p>\n<p>Li, L., J. Joh, J. A. del Alamo and C. V. Thompson, \u201cSpatial distribution of structural degradation under high-power stress in AlGaN\/GaN High-Electron Mobility Transistors.\u201d Applied Physics Letters, vol. 100, p. 172109, 2012.<\/p>\n<p>Joh, J. and J. A. del Alamo, \u201cTime evolution of electrical degradation in GaN high electron mobility transistors.\u201d IEEE International Reliability Physics Symposium, Monterey, CA, April 2011.<\/p>\n<p>del Alamo, J. A., \u201cThe High-Electron Mobility Transistor at 30: impressive accomplishments and exciting prospects.\u201d Invited Plenary Session talk at International Conference on Compound Semiconductor Manufacturing Technology, Palm Springs, CA, May 2011, p. 17.<\/p>\n<p>del Alamo, J. A., D.-H. Kim, T.-W. Kim, D. Jin, and D. A. Antoniadis, \u201cIII-V CMOS: What Have we Learned from HEMTs?\u201d Invited talk at the 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, May 2011.<\/p>\n<p>Kim, T.-W and J. A. del Alamo, \u201cInjection Velocity in Thin-Channel InAs HEMTs.\u201d 23rd International Conference on Indium Phosphide and Related Materials, Berlin, Germany, May 2011.<\/p>\n<p>Xia, L., V. Tokranov, S. Oktyabrsky and J. A. del Alamo, \u201cMobility Enhancement of Two-Dimensional hole Gas in an In<sub>0.24<\/sub>Ga<sub>0.76<\/sub>As Quantum Well by &lt;100&gt; Uniaxial Strain.\u201d 38th International Symposium on Compound Semiconductors, Berlin, Germany, May 2011, p. 396.<\/p>\n<p>Gogineni, U., J. A. del Alamo and A. Valdes Garcia, \u201cAnalytical Model for RF Power Performance of Deeply Scaled CMOS Devices.\u201d IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Baltimore, MD, June 2011.<\/p>\n<p>del Alamo, J. A., \u201cInAs HEMTs: the path to THz electronics?\u201d Invited talk at Workshop on High-Performance Narrow-Bandgap HEMT Technology for Advanced Microwave Front-Ends: Towards the End of the Roadmap? European Microwave Week, Manchester, UK, October 2011.<\/p>\n<p>Xia, L., V. Tokranov, S. R. Oktyabrsky, and J. A. del Alamo, \u201cPerformance Enhancement of p-channel InGaAs Quantum-Well FETs by Superposition of Process-Induced Uniaxial Strain and Epitaxially-grown Biaxial Strain.\u201d IEEE International Electron Devices Meeting, Washington DC, December 2011, p. 315.<\/p>\n<p>Kim, D.-H., B. Brar and J. A. del Alamo, \u201cf<sub>T<\/sub>=688 GHz and f<sub>max<\/sub>=800 GHz in L<sub>g<\/sub>=40 nm In<sub>0.7<\/sub>Ga<sub>0.3<\/sub>As MHEMTs with g<sub>m,max<\/sub>&gt;2.7 mS\/um.\u201d IEEE International Electron Devices Meeting, Washington DC, December 2011, p. 319.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Compound semiconductor transistor technologies for RF, microwave and millimeter wave applications. Nanometer-scale III-V compound semiconductor transistors for future digital applications. Technology and pedagogy of online laboratories for engineering education.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[4080],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6191"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/comments?post=6191"}],"version-history":[{"count":9,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6191\/revisions"}],"predecessor-version":[{"id":6669,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6191\/revisions\/6669"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/media?parent=6191"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/categories?post=6191"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/tags?post=6191"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}