{"id":6149,"date":"2012-07-17T16:33:10","date_gmt":"2012-07-17T16:33:10","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/?p=6149"},"modified":"2012-08-10T14:02:01","modified_gmt":"2012-08-10T14:02:01","slug":"dimitri-a-antoniadis-2011","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/dimitri-a-antoniadis-2011\/","title":{"rendered":"Dimitri A. Antoniadis"},"content":{"rendered":"<h3>Collaborators<\/h3>\n<ul>\n<li>T. Equi, FCRP Materials, Structures, and Devices Focus Center, Executive Director<\/li>\n<li>L. Wei, Post-Doctoral Fellow<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>J. Teherani, Res. Asst., EECS<\/li>\n<li>J. Lin, Res. Asst., EECS<\/li>\n<li>E. Polyzoeva, Res. Asst., EECS<\/li>\n<li>U. Radhakrishna, Res. Asst., EECS<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>W. Rokui, Admin. Asst. II<\/li>\n<li>L. McCormick, Admin. Asst. II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>B.S. Ong, K. L. Pey, C. Y. Ong, C. S. Tan, D. A. Antoniadis, and E. E. Fitzgerald, \u201cComparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors\u201d,\u00a0 <em>Applied Phys. Lett.<\/em> <strong>98<\/strong>, 182102 (3 pages), 2011.<\/p>\n<p>J. Lin, T-W. Kim, D. A. Antoniadis, and J. A. del Alamo, \u201cA Self-Aligned InGaAs Quantum-Well MOSFET Fabricated through a Lift-off Free Front-end Process\u201d, Accepted for publication, <em>IEEE Electr. Dev. Lett., <\/em>2012.<\/p>\n<p>Y. Liu, M. Luisier, A. Majumdar, D. A. Antoniadis, and M. S. Lundstrom, \u201cOn the Interpretation of Ballisitc Injection Velocity in Deeply Scaled MOSFETs\u201d, <em>IEEE Trans. Elcetron Dev<\/em>. 59, pp. 994-1001, 2012.<\/p>\n<p>L. Wei, O. Mysore, and D. A. Antoniadis, \u201cVirtual-Source Based Self-Consistent Current and Charge FET Models \u2013 From Ballistic to Drift-Diffusion Velocity- Saturation Operation\u201d, <em>IEEE,<\/em> <em>Trans. Electron Dev<\/em>.,\u00a0 Vol. 59, pp. 1263-1271, 2012.<\/p>\n<p>M. Luisier, M. Lundstrom, D. A. Antoniadis, and J. Bokor<strong>, \u201c<\/strong>Ultimate Device Scaling: Intrinsic Performance Comparisons of Carbon-based, InGaAs, and Si Field-effect Transistors for 5 nm Gate Length<strong>\u201d, <\/strong><em>Proc.<\/em> <em>International Electron Devices Meeting (IEDM),<\/em> pp. 11.2.1 &#8211; 11.2.4, 2011.<\/p>\n<p>L. Wei and D. A. Antoniadis, \u201cCMOS Device Design and Optimization from a Perspective of Circuit-Level Energy-Delay Optimization \u201c<em>Proc.<\/em> <em>International Electron Devices Meeting (IEDM),<\/em> pp. 15.3.1 &#8211; 15.3.4 , 2011.<\/p>\n<p>G. Kurian, C. Sun, C-H Owen Chen, J. E. Miller, J. Michel, L. Wei, D. A. Antoniadis, L-S Peh, L. Kimerling, V. Stojanovic and A. Agarwal, \u201cCross-layer Energy and Performance Evaluation of a Nanophotonic Manycore Processor System using Real Application Workloads \u201c, <em>Proceedings of the IEEE International Parallel and Distributed Processing Symposium<\/em>, May 2012.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Fabrication, measurements and modeling of silicon- and germanium-based devices for high-speed and low-power integrated circuits.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[39],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6149"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/comments?post=6149"}],"version-history":[{"count":9,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6149\/revisions"}],"predecessor-version":[{"id":6686,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6149\/revisions\/6686"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/media?parent=6149"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/categories?post=6149"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/tags?post=6149"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}