{"id":6001,"date":"2012-07-18T22:26:23","date_gmt":"2012-07-18T22:26:23","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/?p=6001"},"modified":"2012-07-18T22:26:23","modified_gmt":"2012-07-18T22:26:23","slug":"ionic-conduction-studies-in-tlbr-radiation-detector-materials","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/ionic-conduction-studies-in-tlbr-radiation-detector-materials\/","title":{"rendered":"Ionic Conduction Studies in TlBr Radiation Detector Materials"},"content":{"rendered":"<p>Detection of high-energy radiation (e.g., \u03b3-rays) is key in nuclear non-proliferation strategies.\u00a0 When a wide-band gap semiconductor detector intercepts a \u03b3-ray, electron-hole pairs are formed, resulting in an increase in electrical conductivity. This change in conductivity is maximized if the conductivity in the non-illuminated (dark) state is very low. Current semiconductor technologies require cooling to very low temperatures, which adds to cost and reduces portability.\u00a0 TlBr is an attractive detector material given its low room-temperature dark conductivity, as well as its high mass density, leading to higher radiation absorption.<\/p>\n<p>In this project, we have characterized the dominant ionic conduction properties in TlBr using impedance spectroscopy.\u00a0 Through doping techniques, we have determined that TlBr is primarily a Schottky-type ionic conductor, meaning that Tl and Br move through the material by vacancy motion.\u00a0 These measurements have led us to predict a doping strategy to minimize the dark conductivity, and we are collaborating with a local company (RMD) to implement this technology as well as developing it further by studying new TlBr based material systems.\u00a0 In addition, our newfound understanding of TlBr has led us to investigate novel device designs never before used in ionic conducting systems.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Detection of high-energy radiation (e.g., \u03b3-rays) is key in nuclear non-proliferation strategies.\u00a0 When a wide-band gap semiconductor detector intercepts a&#8230;<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[28,8],"tags":[70,11635,4103],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6001"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/comments?post=6001"}],"version-history":[{"count":2,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6001\/revisions"}],"predecessor-version":[{"id":6337,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/posts\/6001\/revisions\/6337"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/media?parent=6001"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/categories?post=6001"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/wp-json\/wp\/v2\/tags?post=6001"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}