{"id":5972,"date":"2012-07-18T22:26:45","date_gmt":"2012-07-18T22:26:45","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/?p=5972"},"modified":"2012-07-18T22:26:45","modified_gmt":"2012-07-18T22:26:45","slug":"reliability-studies-of-algangan-hemts","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/reliability-studies-of-algangan-hemts\/","title":{"rendered":"Reliability Studies of AlGaN\/GaN HEMTs"},"content":{"rendered":"
There is an increasing interest in AlGaN\/GaN high electron mobility transistors (HEMTs) due to their great potential for high performance at microwave frequencies. However, the performance of these devices is often limited by material reliability issues. Unfortunately, a detailed physical understanding of the degradation mechanisms is still lacking. The objective of this project is to develop that understanding through appropriate testing and failure analysis, so that test methods and models can be developed that will lead to further improvement in the reliability and electrical performance of these devices though optimization their design.<\/p>\n