{"id":5703,"date":"2012-07-18T22:27:44","date_gmt":"2012-07-18T22:27:44","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/?p=5703"},"modified":"2012-07-18T22:27:44","modified_gmt":"2012-07-18T22:27:44","slug":"synthesis-of-monolayer-hexagonal-boron-nitride-on-cu-foil-using-chemical-vapor-deposition","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/synthesis-of-monolayer-hexagonal-boron-nitride-on-cu-foil-using-chemical-vapor-deposition\/","title":{"rendered":"Synthesis of Monolayer Hexagonal Boron Nitride on Cu Foil using Chemical Vapor Deposition"},"content":{"rendered":"

Hexagonal boron nitride (h-BN) is very attractive for many applications, particularly as a protective coating, dielectric layer\/substrate, transparent membrane, or deep ultraviolet emitter. In this work, we carried out a detailed investigation of h-BN synthesis on Cu substrate using chemical vapor deposition (CVD) with two heating zones under low pressure (LP). Previous atmospheric pressure (AP) CVD syntheses were able to obtain only a few layers of h-BN without a good control on the number of layers [1<\/a>] <\/sup> [2<\/a>] <\/sup>.\u00a0 In contrast, under LPCVD growth, monolayer h-BN was synthesized, and time-dependent growth was investigated (Figure 1).\u00a0 It was also observed that the morphology of the Cu surface affects the location and density of the h-BN nucleation (Figure 2).\u00a0 Ammonia borane, which is easily accessible and more stable under ambient conditions than borazine, is used as a BN precursor. The h-BN films are characterized by atomic force microscopy, transmission electron microscopy and electron energy loss spectroscopy analyses. Our results suggest that the growth here occurs via surface-mediated growth, which is similar to graphene growth on Cu under LP. These atomically thin layers are particularly attractive for use as atomic membranes or dielectric layers\/substrates for graphene devices [3<\/a>] <\/sup>.<\/p>\n\n\t\t