{"id":5377,"date":"2012-07-18T22:28:43","date_gmt":"2012-07-18T22:28:43","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/?p=5377"},"modified":"2012-07-18T22:28:43","modified_gmt":"2012-07-18T22:28:43","slug":"recombination-dynamics-of-charge-carriers-in-nanostructured-solar-cells","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2012\/recombination-dynamics-of-charge-carriers-in-nanostructured-solar-cells\/","title":{"rendered":"Recombination Dynamics of Charge Carriers in Nanostructured Solar Cells"},"content":{"rendered":"
Nanostructured solar cells are attracting increasing attention as a promising photovoltaic (PV) technology [1<\/a>] <\/sup>. Generation of free charge carriers in nanostructured PV devices occurs at the electron donor-acceptor interface, analogous to the pn-junction interface in traditional crystalline silicon solar cells. However, recombination at this interface constitutes one of the major charge carrier loss pathways. Thus characterizing and controlling recombination dynamics is critical for informing the design of novel device architectures. Recombination parameters also enable comparisons between different device architectures.<\/p>\n