{"id":3854,"date":"2011-07-13T17:21:54","date_gmt":"2011-07-13T17:21:54","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=3854"},"modified":"2011-07-19T14:58:05","modified_gmt":"2011-07-19T14:58:05","slug":"tomas-palacios","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/tomas-palacios\/","title":{"rendered":"Tom\u00e1s Palacios"},"content":{"rendered":"<div class=\"pf-content\"><h3>Collaborators<\/h3>\n<ul>\n<li>D. Antoniadis, MIT<\/li>\n<li>J. del Alamo, MIT<\/li>\n<li>P. Jarillo-Herrero, MIT<\/li>\n<li>D. Jena, University of Notre Dame<\/li>\n<li>J. Kong, MIT<\/li>\n<li>U. K. Mishra, University of California \u2013 Santa Barbara<\/li>\n<li>E. Monroy, CEA-Grenoble, France<\/li>\n<li>E. Munoz, ETSIT-UPM, Spain<\/li>\n<li>D. Perreault, MIT<\/li>\n<li>C. Thompson, MIT<\/li>\n<li>H. Xing, University of Notre Dame<\/li>\n<\/ul>\n<h3>Visiting Scientists<\/h3>\n<ul>\n<li>M. Azize, Post Doc, France<\/li>\n<li>H.-S. Lee, Post Doc, South Korea<\/li>\n<li>E. Matioli, Post Doc, Brazil<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>F. Gao, Res. Asst.<\/li>\n<li>A. Hsu, Res. Asst.<\/li>\n<li>D. S. Lee, Res. Asst.<\/li>\n<li>B. Lu, Res. Asst.<\/li>\n<li>B. Mailly, Res. Asst.<\/li>\n<li>M. Medlock, Res. Asst.<\/li>\n<li>D. Piedra, Res. Asst.<\/li>\n<li>O. I. Saadat, Res. Asst.<\/li>\n<li>M. Sun, Res. Asst.<\/li>\n<li>H. Wang, Res. Asst.<\/li>\n<li>X. Zhang, Res. Asst.<\/li>\n<\/ul>\n<h3>Undergraduate Student<\/h3>\n<ul>\n<li>B. Jain<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>E. Kubicki, Admin. Asst. II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>Chung, J.W., W. E. Hoke, E. M. Chumbes, and T. Palacios, \u201cAlGaN\/GaN HEMT with 300-GHz f<sub>max<\/sub>,\u201d Electron Dev. Letts., vol. 31, pp. 195-197, 2010.<\/p>\n<p>Lu, B., E. L. Piner, and T. Palacios, \u201cSchottky Drain Technology for High Voltage AlGaN\/GaN HEMTs on Si Substrates,\u201d Electron Dev. Letts., vol. 31, pp. 302-304, 2010.<\/p>\n<p>Wang, H., J. W. Chung, X. Gao, S. Guo, and T. Palacios, \u201cAl<sub>2<\/sub>O<sub>3<\/sub> Passivated InAlN\/GaN HEMTs on SiC Substrate with Record Current Density and Transconductance,\u201d Physica Status Solidi (c), vol. 7, pp. 2440-2444, 2010.<\/p>\n<p>Palacios, T., A. Hsu, and H. Wang, \u201cApplications of Graphene Devices in RF Communications,\u201d IEEE Communications Magazine, vol. 48, pp. 122-128, 2010 (Invited).<\/p>\n<p>Simms, R. J. T., F. Gao, Y. Pei, T. Palacios, U. K. Mishra, and M. Kuball, \u201cElectric Field Distribution in AlGaN\/GaN HEMTs Investigated by Electroluminescence,\u201d Appl. Phys. Letts., vol. 97, 033502, 2010.<\/p>\n<p>Joh, J., F. Gao, T. Palacios, and J. A. del Alamo, \u201cA model for the critical voltage for electrical degradation of GaN high electron mobility transistors,\u201d Microelectronics Reliability, vol. 50, pp. 676-773, 2010.<\/p>\n<p>Wang, H., A. Hsu, J. Wu, J. Kong, and T. Palacios, \u201cGraphene-based Ambipolar RF Mixers,\u201d Electron Dev. Letts., vol. 31, pp. 906-908, 2010.<\/p>\n<p>Azize, M., and T. Palacios, \u201cEffect of substrate-induced strain in the transport properties of AlGaN\/GaN heterostructures,\u201d J. of Appl. Phys., vol. 108,\u00a0 023707, 2010.<\/p>\n<p>Makaram, P., J. Joh, J. del Alamo, T. Palacios, and C. V. Thompson, \u201cEvolution of Structural Defects Associated with Electrical Degradation in AlGaN\/GaN HEMTs,\u201d Appl. Phys. Letts, vol. 96, 233509, 2010.<\/p>\n<p>Lu, B. and T. Palacios, \u201cHigh Breakdown (&gt;1500 V) AlGaN\/GaN HEMTs by Substrate-Transfer Technology,\u201d Electron Dev. Letts., vol. 31, pp. 951-953, 2010.<\/p>\n<p>Lu, B., O. I. Saadat and T. Palacios, \u201cHigh-Performance Integrated Dual-Gate AlGaN\/GaN Enhancement-Mode Transistor,\u201d Electron Dev. Letts., vol. 31, pp. 990-992, 2010.<\/p>\n<p>Tirado, J. M., D. Nezich, X. Zhao, J. W. Chung, J. Kong, and T. Palacios, \u201cStudy of Transport Properties in Graphene Monolayer Flakes on SiO<sub>2<\/sub> Substrates,\u201d J. Vac. Sci. Technol. B, vol. 28 (6), pp. C6D11-14, 2010.<\/p>\n<p>Palacios, T., \u201cGraphene Ambipolar Electronics,\u201d Recent Advances in Graphene and Related Materials, Singapore, 1-6 August 2010. (Invited)<\/p>\n<p>Palacios, T., \u201cGaN Transistors: Revolutionizing Electronics from Terahertz to Kilovolts,\u201d International Workshop on Nitride Semiconductors (IWN-2010), Tampa, FL, 19-24 September 2010. (Invited, Plenary)<\/p>\n<p>Palacios, T., \u201cFuture of GaN Electronics,\u201d European Microwave Week, CNIT, Paris, France, 26 September \u2013 1 October 2010. (Invited)<\/p>\n<p>Ryu, K., J. W. Chung, B. Lu, and T. Palacios, \u201cWafer Bonding Technology in Nitride Semiconductors for Applications in Energy and Communications,\u201d 218th Meeting of the Electrochemical Society, Las Vegas, NV, 11-15 October 2010. (Invited)<\/p>\n<p>Wang, H. A. Hsu, K. Kang Kim, J. Kong, and T. Palacios, \u201cGigahertz Ambipolar Frequency Multipliers based on CVD Graphene,\u201d Proc. Of the International Electron Device Meeting, pp. 572-575, San Francisco, CA (2010).<\/p>\n<p>Chung, J. W., T.-W. Kim, and T. Palacios, \u201cAdvanced Gate Technologies for State-of-the-art f<sub>T <\/sub>in AlGaN\/GaN HEMTs,\u201d Proc. Of the International Electron Device Meeting, pp. 676-679, San Francisco, CA (2010).<\/p>\n<\/div>","protected":false},"excerpt":{"rendered":"<p>Design, fabrication and characterization of novel electronic devices in wide bandgap semiconductors and graphene; polarization and bandgap engineering; transistors for sub-mm wave power and digital applications; new ideas for power conversion and generation; interaction of biological systems with semiconductor materials and devices; nanowires and graphene\u2013based transistors.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[60],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3854"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/comments?post=3854"}],"version-history":[{"count":2,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3854\/revisions"}],"predecessor-version":[{"id":3960,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3854\/revisions\/3960"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/media?parent=3854"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/categories?post=3854"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/tags?post=3854"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}