{"id":3833,"date":"2011-07-13T16:05:46","date_gmt":"2011-07-13T16:05:46","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=3833"},"modified":"2011-07-20T20:21:25","modified_gmt":"2011-07-20T20:21:25","slug":"judy-l-hoyt","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/judy-l-hoyt\/","title":{"rendered":"Judy L. Hoyt"},"content":{"rendered":"<div class=\"pf-content\"><h3>Collaborators<\/h3>\n<ul>\n<li>D. Antoniadis, EECS<\/li>\n<li>F. Kartner, EECS<\/li>\n<li>M. Canonico, ASU<\/li>\n<li>T. Lyszczarz, MIT Lincoln Labs<\/li>\n<li>J. Yoon, MIT Lincoln Labs<\/li>\n<li>A. Nayfeh, Masdar Institute<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>W. Chern, EECS<\/li>\n<li>N. DiLello, EECS<\/li>\n<li>L. Gomez, EECS<\/li>\n<li>M. Kim, DMSE<\/li>\n<li>J. Teherani, EECS<\/li>\n<\/ul>\n<h3>Research Staff<\/h3>\n<ul>\n<li>G. Riggott, Research Specialist<\/li>\n<li>P. Hashemi, Post-doctoral Scholar<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li> W. Rokui, Admin. Asst. II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>P. Hashemi, J.T. Teherani, and J.L. Hoyt, &#8220;Investigation of Hole Mobility in Gate-All-Around Si Nanowire p-MOSFETs with High-k\/Metal-Gate: Effects of Hydrogen Thermal Annealing and Nanowire Shape,&#8221; <em>International Electron De\u00advice Meeting (IEDM 2010)<\/em>, San Francisco, USA, Session 34.5 De\u00adcember 2010.<\/p>\n<p>P. Hashemi, C.D. Poweleit, M. Canonico, and J.L. Hoyt, \u201cAd\u00advanced Strained-Silicon and Core-Shell Si\/Si<sub>1-x<\/sub>Ge<sub>x<\/sub> Nanowires for CMOS Transport Enhancement,&#8221; <em>ECS (Electrochemical Society) Transactions<\/em>, October 2010.<\/p>\n<p>M. Kim, P. Hashemi, and J.L. Hoyt, Increased critical success for high Ge-content strained SiGe-on Si Using selective epitaxial growth, <em>Appl. Phys. Lett.<\/em> 97, 262106, 2010.<\/p>\n<p>L. Gomez, C. Ni Chleirigh, P. Hashemi, and J.L. Hoyt, &#8220;En\u00adhanced Hole Mobility in High-Ge Content Asymmetrically Strained-SiGe p-MOSFETs,&#8221; <em>IEEE Electron Device Letters<\/em>, vol. 31, no. 8, pp. 782 \u2013 784, August, 2010.<\/p>\n<p>Guangrui Xia and J.L. Hoyt, \u201cSi-Ge interdiffusion under oxidizing con\u00additions in epitaxial SiGe hetero\u00adstructures with high compressive stress,\u201d <em>Applied Physics Letters<\/em>, v 96, n 12, p 122107 (3 pp.), 22 March 2010.<\/p>\n<p>P. Hashemi, M. Kim, J. Hennessy, L. Gomez, D.A. Antoniadis and J.L. Hoyt, &#8220;Width-dependent hole mobility in top-down fabricated Si-core\/Ge-shell nanowire MOS\u00adFETs&#8221;, <em>Appl. Phys. Lett.<\/em> 96 (6), p. 063109, Feb. 2010.<\/p>\n<p>J.S. Orcutt, A. Khilo, M.A. Popovic, C.W. Holzwarth, H. Li, J. Sun, B. Moss, M.S. Dahlem, E.P. Ippen, J.L. Hoyt, V. Stojanovic, F.X. K\u00e4rt\u00adner, H.I. Smith, and R.J. Ram, \u201cPhotonic integration in a commer\u00adcial scaled bulk-CMOS process,\u201d Source: <em>2009 International Confer\u00adence on Photonics in Switching, PS &#8217;09, 2009, 2009 International Conference on Photonics in Switching, PS &#8217;09<\/em>, p. 2.<\/p>\n<p>L. Gomez, P. Hashemi, and J.L. Hoyt, &#8220;Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs,\u201d <em>IEEE Transactions on Electron Devices<\/em>, vol. 56, no.11, pp.2644-2651, Nov. 2009.<\/p>\n<p>O.M. Nayfeh, J.L. Hoyt and D.A. Antoniadis, &#8220;Strained Si1-xGex\/Si Band-to-Band Tunneling Transis\u00adtors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switch\u00ading Behavior,\u201d <em>IEEE Transactions on Electron Devices<\/em>, vol. 56,\u00a0\u00a0 no. 10,\u00a0 pp. 2264-2669, Oct. 2009.<\/p>\n<p>P. Hashemi, L. Gomez, and J.L. Hoyt, &#8220;Gate-All-Around N-MOSFETs with Uniaxial Tensile Strain-Induced Performance En\u00adhancement Scalable to Sub-10-nm Nanowire Diameter,&#8221; <em>IEEE Elec\u00adtron Device Letters<\/em>, vol. 30, no. 4, pp. 401-403, April 2009.<\/p>\n<p>A.K. Sood, R.A. Richwine, Y.R. Puri, N. DiLello, J.L. Hoyt, T.I. Akinwande, S. Horn, R.S. Balcerak, G. Bulman, R. Venka\u00adtasubramanian, R., A.I. D&#8217;Souza, T.G. Bramhall, \u201cDevelopment of low dark current SiGe-detector arrays for visible-NIR imaging sen\u00adsor,\u201d <em>Proceedings of the SPIE, <\/em>vol. \u00a07298, p 72983D, 2009.<\/p>\n<p>C. Batten, A. Joshi, J. Orcutt, A. Khilo, B. Moss, C. Holzwarth, M.A. Popovic, Hanqing Li, H.I. Smith, J.L. Hoyt, F.X. Kartner, R.J. Ram, V. Stojanovic, and K. Asanovic, \u201cBuilding many-core processor-to-DRAM networks with monolithic CMOS silicon photonics,\u201d <em>IEEE Micro<\/em>, vol. 29, no. \u00a04, pp. 8-21, July-Aug. 2009.<\/p>\n<p>C.W. Holzwarth, et al., \u201cHigh speed analog-to-digital conversion with silicon photonics,\u201d <em>Proceedings of the SPIE<\/em> v 7220, p 72200B (15 pp.), 2009.<\/p>\n<p>L. Gomez, P. Hashemi, and J.L. Hoyt, &#8220;Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs,\u201d <em>IEEE Transactions on Electron Devices,<\/em> vol. 56, no. 11, pp. 2644-2651, Nov. 2009.<\/p>\n<p>O.M. Nayfeh, J.L. Hoyt and D.A. Antoniadis, &#8220;Strained Si1-xGex\/Si Band-to-Band Tunneling Transis\u00adtors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switch\u00ading Behavior,\u201d <em>IEEE Transactions on Electron Devices<\/em>, vol. 56, no. 10, pp. 2264-2669, Oct. 2009.<\/p>\n<p>P. Hashemi, L. Gomez, and J.L. Hoyt, &#8220;Gate-All-Around N-MOS\u00adFETs with Uniaxial Tensile Strain-Induced Performance Enhance\u00adment Scalable to Sub-10-nm Na\u00adnowire Diameter,&#8221; <em>IEEE Electron Device Letters<\/em>, vol. 30, no. 4, pp. 401-403, April 2009.<\/p>\n<\/div>","protected":false},"excerpt":{"rendered":"<p>Fabrication and device physics of silicon-based heterostructures and nanostructures.  High mobility Si and Ge-channel MOSFETs, nanowire FETs, novel transistor structures, silicon based photovoltaics, and silicon-germanium photodetectors for electronic\/photonic integrated circuits.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[52],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3833"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/comments?post=3833"}],"version-history":[{"count":3,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3833\/revisions"}],"predecessor-version":[{"id":4234,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3833\/revisions\/4234"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/media?parent=3833"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/categories?post=3833"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/tags?post=3833"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}