{"id":3824,"date":"2011-07-13T15:18:18","date_gmt":"2011-07-13T15:18:18","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=3824"},"modified":"2011-07-19T14:51:52","modified_gmt":"2011-07-19T14:51:52","slug":"eugene-fitzgerald","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/eugene-fitzgerald\/","title":{"rendered":"Eugene Fitzgerald"},"content":{"rendered":"
Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2<\/sub>O3<\/sub> on GaAs, Cheng-Wei Cheng; Hennessy, J.; Antoniadis, D.; Fitzgerald, E.A. Applied Physics Letters,\u00a0 v 95, n 8, p 082106 (3 pp.),\u00a0 24 Aug. 2009.<\/p>\n Thermal considerations for advanced SOI substrates designed for III-V\/Si heterointegration; Yang, N; Bulsara, M.T.; Fitzgerald, E.A.; Liu, W.K.; Lubyshev, D.; Fastenau, J.M.; Wu, Y.; Urteaga, M.; Ha, W.; Bergman, J.; Brar, B.; Drazekd, C.; Daval, N.; Benaissa, L.; Augendre, E.; Hoke, W.E.; LaRoche, J.R.; Herrick, K.J.; Kazior, T.E. 2009 IEEE International SOI Conference, p 2 pp.,\u00a0 2009.<\/p>\n Arrayed Si\/SiGe nanowire and heterostructure formations via au-assisted wet chemical etching method; Wang, X. ; Pey, K.L.; Choi, W.K.; Ho, C.K.F.; Fitzgerald, E.; Antoniadis, D. Electrochemical and Solid-State Letters, v 12, n 5, p 37-40,\u00a0 May 2009.<\/p>\n Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting; Liang Zhang ; Jing Hua Teng; Soo Jin Chua; Fitzgerald, E.A. Applied Physics Letters,\u00a0 v 95, n 26, p 261110 (3).<\/p>\n Growth of highly tensile-strained Ge on relaxed In<sub>x<\/sub>Ga<sub>1-x<\/sub>As by metal-organic chemical vapor deposition; Yu Bai ; Lee, K.E.; Chengwei Cheng; Lee, M.L.; Fitzgerald, E.A. Journal of Applied Physics,\u00a0 v 104, n 8, p 084518 (9 pp.),\u00a0 15 Oct. 2008.<\/p>\n Annihilation of threading dislocations in strain relaxed nano-porous GaN template for high quality GaN growth; Hartono, H. Soh, C.B.; Chua, S.J.; Fitzgerald, E.A. Physica Status Solidi C,\u00a0 v 4, n 7, p 2572-5,\u00a0 June 2007.<\/p>\n In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum and isopropanol precursors; Cheng, C.-W. ; Fitzgerald, E.A. Applied Physics Letters,\u00a0 v 93, n 3, p 031902-1-3,\u00a0 21 July 2008<\/p>\n MBE growth of InP-HBT structures on Ge-on-insulator\/Si substrates by MBE; Lubyshev, D. ; Fastenau, J.M.; Wu, Y.; Liu, W.K.; Urteaga, M.; Ha, W.; Bergman, J.; Brar, B.; Bulsara, M.T.; Fitzgerald, E.A.; Hoke, W.E.; LaRoche, J.R.; Herrick, K.J.; Kazior, T.E. 2008 IEEE 20th International Conference on Indium Phosphide & Related Materials (IPRM), p 3 pp.,\u00a0 2008.<\/p>\n Alternative slip system activation in lattice-mismatched InP\/InGaAs interfaces; Quitoriano, N.J. ; Fitzgerald, E.A. Journal of Applied Physics,\u00a0 v 101, n 7, p 73509-1-10,\u00a0 1 April 2007.<\/p>\n Monolithic III-V\/Si integration; Fitzgerald, E.A. ; Bulsara, M.T.; Bai, Y.; Cheng, C.; Liu, W.K.; Lubyshev, D.; Fastenau, J.M.; Wu, Y.; Urtega, M.; Ha, W.; Bergman, J.; Brar, B.; Drazek, C.; Daval, N.; Letertre, F.; Hoke, W.E.; LaRoche, J.R.; Herrick, K.J.; Kazior, T.E. 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT), p 4 pp.,\u00a0 2008.<\/p>\n Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES); Chilukuri, K.; Mori, M.J.; Dohrman, C.L.; Fitzgerald, E.A. Semiconductor Science and Technology,\u00a0 v 22, n 2, p 29-34,\u00a0 Feb. 2007.<\/p>\n Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices; Dohrman, C.L. ; Chilukuri, K.; Isaacson, D.M.; Lee, M.L.; Fitzgerald, E.A. Materials Science & Engineering B (Solid-State Materials for Advanced Technology),\u00a0 v 135, n 3, p 235-7,\u00a0 15 Dec. 2006.<\/p>\n Strained and relaxed SiGe for high-mobility MOSFETs; Lee, M.L. ; Antoniadis, D.A.; Fitzgerald, E.A. 2006 International SiGe Technology and Device Meeting (IEEE Cat. No. 06EX1419), p 158-9,\u00a0 2006.<\/p>\n<\/div>","protected":false},"excerpt":{"rendered":" Materials and devices: lattice-mismatched materials, III-V\u2019s, IV\u2019s, dielectrics; deposition including MOCVD; innovation and commercialization<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[19],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3824"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/comments?post=3824"}],"version-history":[{"count":3,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3824\/revisions"}],"predecessor-version":[{"id":3946,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3824\/revisions\/3946"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/media?parent=3824"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/categories?post=3824"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/tags?post=3824"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}