{"id":3818,"date":"2011-07-13T15:08:59","date_gmt":"2011-07-13T15:08:59","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=3818"},"modified":"2011-07-19T14:51:15","modified_gmt":"2011-07-19T14:51:15","slug":"jesus-a-del-alamo","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/jesus-a-del-alamo\/","title":{"rendered":"Jes\u00fas A. del Alamo"},"content":{"rendered":"<div class=\"pf-content\"><h3>Collaborators<\/h3>\n<ul>\n<li>J. Jimenez, Triquint Semicon<\/li>\n<li>D.H. Kim, Teledyne<\/li>\n<li>Y. Knafo, Gal El<\/li>\n<li>A. Valdes, IBM<\/li>\n<\/ul>\n<h3>Postdoctoral Fellow<\/h3>\n<ul>\n<li>J. Joh<\/li>\n<li>T. W. Kim<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>U. Gogineni, Res. Asst., EECS<\/li>\n<li>D.H. Jin, Res. Asst., EECS<\/li>\n<li>L. Xia, Res. Asst., EECS<\/li>\n<li>S. Demirtas, Res. Asst., EECS<\/li>\n<li>X. Zhao, Res. Asst., DMSE<\/li>\n<li>A. Guo, Res. Asst. EECS<\/li>\n<li>J. Lin, Res. Asst. EECS<strong><\/strong><\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<p>E. Kubicki, Admin. Asst. II<\/p>\n<h3>Publications<\/h3>\n<p>Kim, T.-W., D.-H. Kim, and J. A. del Alamo, \u201c60 nm Self-Aligned-Gate InGaAs HEMTs with Record High-Frequency Characteristics,\u201d <em>IEEE International Electron Devices Meeting,<\/em> San Francisco, CA, December 6-8, 2010, pp. 696-699.<\/p>\n<p>Kim, D.-H., J. A. del Alamo, P. Chen, W. Ha, M. Urteaga and B. Brar, \u201c50 nm E-Mode\u00a0 In0.7Ga0.3As PHEMTs on 100 mm InP Substrate with fmax&gt;1 THz,\u201d <em>IEEE International Electron Devices Meeting<\/em>, San Francisco, CA, December 6-8, 2010, pp. 692-695.<\/p>\n<p>Joh, J. and J. A. del Alamo, \u201cRF Power Degradation of GaN High Electron Mobility Transistors,\u201d <em>IEEE International Electron Devices Meeting,<\/em> San Francisco, CA, December 6-8, 2010, pp. 468-471.<\/p>\n<p>Joh, J., P. Makaram, C. V. Thompson, and J. A. del Alamo, \u201cPlanar View of Structural Degradation in GaN High Electron Mobility Transistors: Time and Temperature Dependence,\u201d Invited talk at <em>International Workshop on Nitride Semiconductors (IWN 2010)<\/em>, Tampa, FL, 2010.<\/p>\n<p>Kim, D.-H. and J. A. del Alamo, \u201d30 nm InAs PHEMTs with fT=644 GHz and fmax=681 GHz,\u201d <em>IEEE Electron Device Letters,<\/em> vol. 31, no. 8, pp. 806-808, August 2010.<\/p>\n<p>Kim, D.-H. and J. A. del Alamo, \u201dScalability of sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications,\u201d <em>IEEE Transactions on Electron Devices,<\/em> vol. 57, no. 7, pp. 1504-1511, July 2010.<\/p>\n<p>Makaram, P., J. Joh, J. A. del Alamo, T. Palacios, C. V. Thompson, \u201dEvolution of Structural Defects Associated with Electrical Degradation in AlGaN\/GaN HEMTs,\u201d <em>Applied Physics Letters<\/em>, vol. 96, p. 233509, 2010.<\/p>\n<p>Wu, J. H., and J. A. del Alamo, \u201dFabrication and Characterization of through-Substrate Interconnects,\u201d <em>IEEE Transactions on Electron Devices<\/em>, vol. 57, no. 6, pp. 1261-1268, June 2010.<\/p>\n<p>Kim, T.-W., D.-H. Kim and J. A. del Alamo, \u201cLogic Characteristics of 40 nm thin-channel InAs HEMTs,\u201d <em>22nd International Conference on Indium Phosphide and Related Materials,<\/em> Kagawa, Japan, May 31-June 4, 2010, pp. 496-499.<\/p>\n<p>Xia, L. and J. A. del Alamo, \u201cMobility enhancement in Indium-rich N-channel InxGa1-xAs HEMT by Application of &lt;110&gt; Uniaxial Strain,\u201d <em>22nd International Conference on Indium Phosphide and Related Materials<\/em>, Kagawa, Japan, May 31-June 4, 2010, pp. 504-507.<\/p>\n<p>Joh, J. and J. A. del Alamo, \u201cReliability and Failure Mechanisms of GaN-based HEMTs,\u201d Invited talk at <em>10th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies (EXMATEC 2010),<\/em> Darmstadt\/Seeheim, Germany, May 19-21, 2010, pp. 57-58.<\/p>\n<p>Joh, J., J. A. del Alamo, K. Langworthy, S. Xie, and T. Zheleva, \u201cCorrelation between electrical and material degradation in GaN HEMTs stressed beyond the critical voltage,\u201d <em>Microelectronics Reliability<\/em>, vol. 51, pp. 201-206 (2011).<\/p>\n<p>Demirtas, S. and J. A. del Alamo, \u201cEffect of Trapping on the Critical Voltage for Degradation in GaN High Electron Mobility Transistors,\u201d <em>2010 International Reliability Physics Symposium<\/em>, Anaheim, CA, May 2-6, 2010, pp. 134-138.<\/p>\n<p>Gogineni, U., H. Li, J. A. del Alamo, S. Sweeney, J. Wang, and B. Jagannathan, \u201dEffect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices,\u201d <em>IEEE Journal of Solid State Circuits<\/em>, vol. 45, no. 5, pp. 998-1006, May 2010.<\/p>\n<p>del Alamo, J. A. and D.-H. Kim, \u201cThe prospects for 10 nm III-V CMOS,\u201d Invited talk at <em>2010 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)<\/em>, Hsinchu, Taiwan, April 26-28, 2010, pp. 166-167.<\/p>\n<p>Gogineni, U., J. A. del Alamo, and C. Putnam, \u201cRF Power Potential of 45 nm CMOS Technology,\u201d <em>10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010)<\/em>, New Orleans, LA, January 11-13, 2010, pp. 204-207.<\/p>\n<p>Waldron, N., D.-H. Kim and J. A. del Alamo, \u201dA Self-Aligned InGaAs HEMT Architecture for Logic Applications,\u201d <em>IEEE Transactions on Electron Devices<\/em>, vol. 56, no. 1, pp. 297-304, January 2010.<\/p>\n<\/div>","protected":false},"excerpt":{"rendered":"<p>Microelectronics device technologies for gigahertz and gigabit-per-second communication systems:  physics, modeling, technology and design. InGaAs and InAs MOSFETs as a post-CMOS semiconductor logic technology. Reliability of GaN transistors. Technology and pedagogy of online laboratories for engineering education.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[4080],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3818"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/comments?post=3818"}],"version-history":[{"count":3,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3818\/revisions"}],"predecessor-version":[{"id":3944,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3818\/revisions\/3944"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/media?parent=3818"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/categories?post=3818"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/tags?post=3818"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}