{"id":3782,"date":"2011-07-13T14:31:42","date_gmt":"2011-07-13T14:31:42","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=3782"},"modified":"2011-08-02T18:26:11","modified_gmt":"2011-08-02T18:26:11","slug":"dimitri-a-antoniadis","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/dimitri-a-antoniadis\/","title":{"rendered":"Dimitri A. Antoniadis"},"content":{"rendered":"
D. A. Antoniadis; \u201c Nanoelectronics Challenges for the 21st Century,\u201d 23rd International Conference on VLSI Design<\/em>, Bangalore, India, January 2010. (Keynote speaker).<\/p>\n D. A. Antoniadis; \u201cNanoelectronics Challenges for the 21st<\/sup> Century,\u201d Design, Automation, and Test in Europe, DATE 2010, <\/em>(Keynote speaker).<\/p>\n Kim, D.-H.; del Alamo, J.A.; Antoniadis, D.A.; Brar, B.; \u201cExtraction of virtual-source injection velocity in sub-100 nm III\u2013V HFETs,\u201d International Electron Devices Meeting (IEDM),<\/em> 2009<\/p>\n P. Hashemi, M. Kim, J. Hennessy, L. Gomez, D. A. Antoniadis, and J. L.Hoyt; \u201cWidth-dependent hole mobility in top-down fabricated Si-core\/Ge-shell nanowire metal-oxide-semiconductor-field-effect-transistors\u201d, Applied Physics Letters<\/em>, Vol. 96, pp. 063109-063109-3, 2010.<\/p>\n B. S. Ong, K. L. Pey, C. Y. Ong, C. S. Tan, C. L. Gan, H. Cai, D. A. Antoniadis, and E. A. Fitzgeral; \u201cEffect of Using Chemical Vapor Deposition WSi2 and Postmetallization Annealing on GaAs Metal-Oxide- Semiconductor Capacitors,” Electrochem. Solid-State Lett.<\/em> 13, H328 (2010)<\/p>\n J. Luo, L. Wei, F. Boeuf, D. Antoniadis, T. Skotnicki, and H.-S. P. Wong, \u201cDevice Engineering for\u00a0 Improving SRAM Static Noise Margin,\u201d 2010 International Conference on Solid State Devices and Materials (SSDM 2010)<\/em>, paper C-4-3, Tokyo, Japan, September\u00a0 22 \u2013 24, 2010.<\/p>\n<\/div>","protected":false},"excerpt":{"rendered":" Fabrication, measurements and modeling of silicon- and germanium-based devices for high-speed and low-power integrated circuits.<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[39],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3782"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/comments?post=3782"}],"version-history":[{"count":7,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3782\/revisions"}],"predecessor-version":[{"id":4302,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3782\/revisions\/4302"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/media?parent=3782"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/categories?post=3782"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/tags?post=3782"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}