{"id":3346,"date":"2011-07-05T20:09:05","date_gmt":"2011-07-05T20:09:05","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=3346"},"modified":"2011-07-19T20:28:16","modified_gmt":"2011-07-19T20:28:16","slug":"gan-for-low-voltage-power-electronics-2","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/gan-for-low-voltage-power-electronics-2\/","title":{"rendered":"GaN for Low Voltage Power Electronics"},"content":{"rendered":"

GaN-based transistors have outstanding properties for the development of ultra-high efficiency and compact power electronics.\u00a0 The high electron mobility in the two-dimensional electron gas and the high critical electric field (greater than 10 times that of Si) make GaN high electron mobility transistors (HEMTs) ideal for power transistors [1<\/a>] <\/sup>.\u00a0 This work focuses on developing devices for operation below 200V.\u00a0 We have developed a process to fabricate multi-finger AlGaN\/GaN transistors with gate width of 39.6 mm (shown in Figure 1) that exhibit low on-resistance.<\/p>\n

In addition to use in AlGaN\/GaN HEMTs, the new technology has also been applied to InAlN\/GaN devices.\u00a0 By using InAlN as the barrier material, we take advantage of the high sheet charge density (Ns<\/sub>=2.5×1013<\/sup> cm-2<\/sup>) caused by higher polarization and reduced defect density of lattice-match InAlN barrier [2<\/a>] <\/sup>.\u00a0 The high sheet charge density results in low sheet resistance and high current density, which are ideal for low-loss, efficient power switches.\u00a0 These devices have high breakdown voltage and excellent thermal stability due to the use of SiC substrates.\u00a0 Additionally, our group has developed gold- free GaN transistor technology using ohmic recess and a Ti\/Al\/W metallization.\u00a0 This technology is promising for the integration of GaN with silicon devices.<\/p>\n\n\t\t