{"id":3329,"date":"2011-07-05T16:37:52","date_gmt":"2011-07-05T16:37:52","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=3329"},"modified":"2011-07-20T16:07:54","modified_gmt":"2011-07-20T16:07:54","slug":"heterogeneous-integration-of-gan-and-si-devices-2","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/heterogeneous-integration-of-gan-and-si-devices-2\/","title":{"rendered":"Heterogeneous Integration of GaN and Si Devices"},"content":{"rendered":"
Gallium nitride (GaN) is a wide bandgap semiconductor with unsurpassed properties for high voltage switches and RF amplifiers. However, in spite of their excellent performance, GaN devices cannot compete with the integration density and complexity of modern Si CMOS electronics. The integration of GaN and Si (100) devices on the same chip would, therefore, enable a vast array of new applications, from novel power distribution schemes in Si microsystems, to power digital-to-analog converters and new opportunities for optoelectronic devices integrated on a Si platform.<\/p>\n