{"id":3122,"date":"2011-06-28T15:56:21","date_gmt":"2011-06-28T15:56:21","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=3122"},"modified":"2011-07-19T20:13:11","modified_gmt":"2011-07-19T20:13:11","slug":"experiment-and-simulation-on-channel-mobility-of-in0-53ga0-47as-quantum-well-mosfet-structures","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/experiment-and-simulation-on-channel-mobility-of-in0-53ga0-47as-quantum-well-mosfet-structures\/","title":{"rendered":"Experiment and Simulation on Channel Mobility of In<sub>0.53<\/sub>Ga<sub>0.47<\/sub>As Quantum-well MOSFET Structures"},"content":{"rendered":"<div class=\"pf-content\"><p>This paper discusses a way to optimize the In<sub>0.53<\/sub>Ga<sub>0.47<\/sub>As quantum-well MOSFET structures from the prospective of channel mobility. We experimentally demonstrated that the barrier thickness and interfacial defect density are two key factors determining the channel mobility, while the effect of the oxide charge is negligible. The mobility model consisting of phonon scattering and coulomb scattering was applied to fit the experimental data. According to the model, for quantum-well MOSFET structures with <em>in-situ<\/em> ALD Al<sub>2<\/sub>O<sub>3<\/sub>, the mobility is dominated by coulomb scattering for the thin barrier case (&lt;5 nm) and dominated by phonon scattering for the thick barrier case (&gt;5 nm). At a barrier thickness of 4 nm, compared to a structure with <em>in-situ<\/em> ALD Al<sub>2<\/sub>O<sub>3<\/sub> with the mobility of 6807 cm<sup>2<\/sup>\/Vs, which corresponds to an interfacial charged defect density of 1.1&#215;10<sup>13<\/sup> cm<sup>-2<\/sup>, the structure with <em>in-situ<\/em> CVD Al<sub>2<\/sub>O<sub>3<\/sub> showed higher mobility (8883 cm<sup>2<\/sup>\/Vs), which corresponds to a lower charged defect density (5&#215;10<sup>12<\/sup> cm<sup>-2<\/sup>).<\/p>\n\n\t\t<style type=\"text\/css\">\n\t\t\t#gallery-1 {\n\t\t\t\tmargin: auto;\n\t\t\t}\n\t\t\t#gallery-1 .gallery-item {\n\t\t\t\tfloat: left;\n\t\t\t\tmargin-top: 10px;\n\t\t\t\ttext-align: center;\n\t\t\t\twidth: 50%;\n\t\t\t}\n\t\t\t#gallery-1 img {\n\t\t\t\tborder: 2px solid #cfcfcf;\n\t\t\t}\n\t\t\t#gallery-1 .gallery-caption {\n\t\t\t\tmargin-left: 0;\n\t\t\t}\n\t\t\t\/* see gallery_shortcode() in wp-includes\/media.php *\/\n\t\t<\/style>\n\t\t<div id='gallery-1' class='gallery galleryid-3122 gallery-columns-2 gallery-size-medium'><dl class='gallery-item'>\n\t\t\t<dt class='gallery-icon landscape'>\n\t\t\t\t<a href='https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-content\/blogs.dir\/10\/files\/2011\/06\/yang_mosfet_01.jpg' rel=\"lightbox[3122]\"><img width=\"300\" height=\"249\" src=\"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-content\/blogs.dir\/10\/files\/2011\/06\/yang_mosfet_01-300x249.jpg\" class=\"attachment-medium size-medium\" alt=\"Figure 1\" loading=\"lazy\" aria-describedby=\"gallery-1-3123\" srcset=\"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-content\/blogs.dir\/10\/files\/2011\/06\/yang_mosfet_01-300x249.jpg 300w, https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-content\/blogs.dir\/10\/files\/2011\/06\/yang_mosfet_01.jpg 717w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/a>\n\t\t\t<\/dt>\n\t\t\t\t<dd class='wp-caption-text gallery-caption' id='gallery-1-3123'>\n\t\t\t\tFigure 1: Channel electron mobility versus the thickness of InGaAs\/InAlAs barrier. The blue diamond symbols indicate the measured mobility. The magenta and red dots indicate the mobility limited by coulomb scattering and phonon scattering, respectively, and the black \u201c+\u201d symbols indicate the simulated final mobility.\n\t\t\t\t<\/dd><\/dl><dl class='gallery-item'>\n\t\t\t<dt class='gallery-icon landscape'>\n\t\t\t\t<a href='https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-content\/blogs.dir\/10\/files\/2011\/06\/yang_mosfet_02.jpg' rel=\"lightbox[3122]\"><img width=\"300\" height=\"249\" src=\"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-content\/blogs.dir\/10\/files\/2011\/06\/yang_mosfet_02-300x249.jpg\" class=\"attachment-medium size-medium\" alt=\"Figure 2\" loading=\"lazy\" aria-describedby=\"gallery-1-3124\" srcset=\"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-content\/blogs.dir\/10\/files\/2011\/06\/yang_mosfet_02-300x249.jpg 300w, https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-content\/blogs.dir\/10\/files\/2011\/06\/yang_mosfet_02.jpg 717w\" sizes=\"(max-width: 300px) 100vw, 300px\" \/><\/a>\n\t\t\t<\/dt>\n\t\t\t\t<dd class='wp-caption-text gallery-caption' id='gallery-1-3124'>\n\t\t\t\tFigure 2: Channel electron mobility versus the charged defect density. The blue diamond symbol and the green square symbol indicate the measured mobility for structure with CVD Al<sub>2<\/sub>O<sub>3<\/sub>\/InGaAs interface and ALD Al<sub>2<\/sub>O<sub>3<\/sub>\/InGaAs interface, respectively. The magenta and red dots indicate the mobility limited by coulomb scattering and phonon scattering, respectively, and the black \u201c+\u201d symbols indicate the simulated final mobility.\n\t\t\t\t<\/dd><\/dl><br style=\"clear: both\" \/>\n\t\t<\/div>\n\n<\/div>","protected":false},"excerpt":{"rendered":"<p>This paper discusses a way to optimize the In0.53Ga0.47As quantum-well MOSFET structures from the prospective of channel mobility. We experimentally&#8230;<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":[],"categories":[28],"tags":[19,4140],"_links":{"self":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3122"}],"collection":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/comments?post=3122"}],"version-history":[{"count":4,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3122\/revisions"}],"predecessor-version":[{"id":4087,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/posts\/3122\/revisions\/4087"}],"wp:attachment":[{"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/media?parent=3122"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/categories?post=3122"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/wp-json\/wp\/v2\/tags?post=3122"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}