{"id":2858,"date":"2011-06-23T19:59:58","date_gmt":"2011-06-23T19:59:58","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=2858"},"modified":"2011-07-20T16:35:32","modified_gmt":"2011-07-20T16:35:32","slug":"physical-characterization-of-cmp-pad-properties","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/physical-characterization-of-cmp-pad-properties\/","title":{"rendered":"Physical Characterization of CMP Pad Properties"},"content":{"rendered":"
In CMP process, the pad asperity modulus and asperity height are two important properties that affect the planarization results [1<\/a>] <\/sup>. In this work, physical measurements of pad surface modulus (by nanoindentation) and asperity height (by micro profilometry) are performed on a JSR water soluble particle (WSP) pad [2<\/a>] <\/sup>. The pad is used to polish 300-mm TEOS wafers with pad conditioning up to 16 hours. Pad aging effects are tested by comparing the measured results from the same location (23 cm from pad center) on the pad after different polishing times (initial, 8 hours, and 16 hours).<\/p>\n