{"id":2692,"date":"2011-06-19T13:03:27","date_gmt":"2011-06-19T13:03:27","guid":{"rendered":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/?p=2692"},"modified":"2012-07-03T18:15:42","modified_gmt":"2012-07-03T18:15:42","slug":"circuit-simulation-using-a-verilog-a-implementation-of-the-virtual-source-transistor-model-2","status":"publish","type":"post","link":"https:\/\/mtlsites.mit.edu\/annual_reports\/2011\/circuit-simulation-using-a-verilog-a-implementation-of-the-virtual-source-transistor-model-2\/","title":{"rendered":"Circuit Simulation Using a Verilog-A Implementation of the Virtual-source Transistor Model"},"content":{"rendered":"
A variety of compact MOSFET models are used for circuit simulation in both industry and academia, ranging from standard industrial models with dimensional and processing parameter dependencies [1<\/a>] <\/sup> to simple, intuitive physical transport models. The virtual-source model (VS model), a recently developed, simple, semi-empirical, short channel MOSFET model, captures the essential physics with relatively few physical parameters, most of which can be directly determined from device measurements or simulations [2<\/a>] <\/sup>. \u00a0Because of its accuracy, simplicity, and scalability, the VS model is excellent for technology benchmarking, performance projection and variability analysis.<\/p>\n