{"id":884,"date":"2010-06-28T14:11:09","date_gmt":"2010-06-28T18:11:09","guid":{"rendered":"https:\/\/wpmu2.mit.local\/?p=884"},"modified":"2010-07-23T15:01:05","modified_gmt":"2010-07-23T19:01:05","slug":"jesus-a-del-alamo","status":"publish","type":"post","link":"https:\/\/wpmu2.mit.local\/jesus-a-del-alamo\/","title":{"rendered":"Jes\u00fas A. del Alamo"},"content":{"rendered":"<div class=\"page-restrict-output\"><h3>Collaborators<\/h3>\n<ul>\n<li>R. Chau, Intel<\/li>\n<li>K. Hayashi, Mitsubishi Electric<\/li>\n<li>J. Jimenez, Triquint Semicon.<\/li>\n<li>Y. Knafo, Gal El<\/li>\n<li>A. Valdes, IBM<\/li>\n<\/ul>\n<h3>Postdoctoral fellow<\/h3>\n<ul>\n<li>J. Joh<\/li>\n<li>T. W. Kim<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>U. Gogineni, Research Assistant, EECS<\/li>\n<li>D.H. Jin, Research Assistant, EECS<\/li>\n<li>L. Xia, Research Assistant, EECS<\/li>\n<li>S. Demirtas, Research Assistant, EECS<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>E. Kubicki, Administrative Assistant II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>Hisaka, T., H. Sasaki, Y. Nogami, K. Hosogi, N. Yoshida, A. A. Villanueva, J. A. del Alamo, S. Hasegawa, and H. Asahi, &#8220;Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions,&#8221;\u00a0 <em>Microelectronics Reliability<\/em>, Vol. 49, Issue 12, pp. 1515-1519, December 2009.<\/p>\n<p>Kharche, N., G. Klimeck, D.-H. Kim, J. A. del Alamo and M. Luisier, &#8220;Performance Analysis of Ultra-Scaled InAs HEMTs,&#8221; <em>2009 IEEE International Electron Devices Meeting<\/em>.<\/p>\n<p>Kim, T.-W., D.-H. Kim, and J. A. del Alamo, &#8220;30 nm In 0.7 Ga 0.3 As Inverted-Type HEMTs with Reduced Gate Leakage Current for Logic Applications,&#8221; <em>2009 IEEE International Electron Devices Meeting.<\/em><\/p>\n<p>Jin, D., D.-H. Kim, T.-W. Kim and J. A. del Alamo, &#8220;Quantum Capacitance in Scaled Down III-V FETs,&#8221; <em>2009 IEEE International Electron Devices Meeting<\/em>.<\/p>\n<p>Kim, D.-H., J. A. del Alamo, D. A. Antoniadis, and B. Brar, &#8220;Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs,&#8221; <em>2009 IEEE International Electron Devices Meeting.<\/em><\/p>\n<p>Xia, L. and J. A. del Alamo, &#8220;Impact of &lt;110&gt; Uniaxial Strain on N-Channel In 0.15 Ga 0.85 As High Electron Mobility Transistors,&#8221; <em>Applied Physics Letters,<\/em> Vol. 95, p. 243504, 2009.<\/p>\n<p>Joh, J., J. A. del Alamo, U. Chowdhury, H.-Q. Tserng and J. Jimenez, &#8220;Measurement of Channel Temperature in GaN High Electron Mobility Transistors,&#8221; <em>IEEE Transactions on Electron Devices<\/em>, Vol. 56, No. 12, pp. 2895-2901, December 2009.<\/p>\n<p>Lin, C.-H., T. A. Merz, D. R. Doutt, M. J. Hetzer, J. Joh, J. A. del Alamo, U.K. Mishra, and L. J. Brillson, &#8220;Nanoscale Mapping of Temperature and Defect Evolution Inside Operating AlGaN\/GaN High Electron Mobility Transistors,&#8221;<em>Applied Physics Letters<\/em>, Vol. 95, p. 033510, 2009.<\/p>\n<p>Joh, J. and J. A. del Alamo, &#8220;Trapping vs. Permanent Degradation in GaN High Electron Mobility Transistors,&#8221;<em> 8th International Conference on Nitride Semiconductors (ICNS-8).<\/em><\/p>\n<p>Demirtas, S and J. A. del Alamo, &#8220;Critical voltage for electrical reliability of GaN High Electron Mobility Transistors on Si Substrate,&#8221; <em>Reliability of Compound Semiconductors Workshop 2009<\/em>.<\/p>\n<p>Joh, J., F. Gao, T. Palacios and J. A. del Alamo, &#8220;A model for the critical voltage for electrical degradation of GaN high electron mobility transistors,&#8221; <em>Reliability of Compound Semiconductors Workshop 2009.<\/em><\/p>\n<p>del Alamo, J. A. and J. Joh, &#8220;GaN HEMT Reliability,&#8221; Invited talk at <em>20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)<\/em>, 2009. Also <em>Microelectronics Reliability<\/em>, vol. 49, pp. 1200-1206, 2009.<\/p>\n<p>del Alamo, J. A. and D.-H. Kim, &#8220;III-V&#8217;s: From THz HEMTs to CMOS,&#8221; Plenary Invited talk at <em>2009 Topical Workshop on Heterostructure Microelectronics.<\/em><\/p>\n<p>Lin,\u00a0 C.-H, T. A. Merz, D. R. Doutt, M. J. Hetzer, J. Joh, J. A. del Alamo, U. K. Mishra, and L. J. Brillson, &#8220;Nanoscale Temperature Distribution, Defect Mapping and Evolution Inside Active AlGaN\/GaN High Electron Mobility Transistors,&#8221;<em> 51st Electronics Materials Conference.<\/em><\/p>\n<p>Gogineni, U., H. Hongmei, S. Sweeney, J. Wang, B. Jagannathan, and J. A. del Alamo, &#8220;Effect of Substrate Contact Shape and Placement on RF Characteristics of 45 nm Low Power CMOS Devices,&#8221; <em>2009 IEEE Radio Frequency Integrated Circuit Symposium.<\/em><\/p>\n<p>del Alamo, J. A., J. Joh, and A. A. Villanueva, &#8220;Electrical, thermal and environmental reliability of transistors: experimental techniques to identify fundamental degradation mechanisms,&#8221; <em>Workshop on Reliability and Manufacturing, (CS-MANTECH)<\/em>.<\/p>\n<p>Kim, D.-H. and J. A. del Alamo, &#8220;Scalability of sub-100 nm thin-channel InAs PHEMTs,&#8221; <em>2009 International Conference on Indium Phosphide and Related Materials.<\/em><\/p>\n<\/div>","protected":false},"excerpt":{"rendered":"<div class=\"page-restrict-output\"><p>Microelectronics device technologies for gigahertz and gigabit-per-second communication systems:  physics, modeling, technology and design. InGaAs as a post-CMOS semiconductor logic technology. Reliability of GaN transistors. Technology and pedagogy of online laboratories for engineering education.<\/p>\n<\/div>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[4081],"_links":{"self":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/884"}],"collection":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/comments?post=884"}],"version-history":[{"count":6,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/884\/revisions"}],"predecessor-version":[{"id":2270,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/884\/revisions\/2270"}],"wp:attachment":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/media?parent=884"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/categories?post=884"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/tags?post=884"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}