{"id":578,"date":"2010-06-23T15:08:38","date_gmt":"2010-06-23T19:08:38","guid":{"rendered":"https:\/\/wpmu2.mit.local\/?p=578"},"modified":"2010-08-10T16:17:09","modified_gmt":"2010-08-10T20:17:09","slug":"electroquasistatic-sensors-for-imaging-ic-features","status":"publish","type":"post","link":"https:\/\/wpmu2.mit.local\/electroquasistatic-sensors-for-imaging-ic-features\/","title":{"rendered":"Electroquasistatic Sensors for Imaging IC Features"},"content":{"rendered":"

A technique for locating junctions in an integrated circuit with electroquasistatic sensors is under development for imaging purposes.\u00a0 An array of coplanar sensors is scanned laterally at a fixed height over the surface of a doped semiconducting bulk. Electric fields from the sensors can penetrate the surface of the semiconductor when the sensors are operated at a frequency comparable to the charge-relaxation frequency of the semiconductor.\u00a0 The challenge is to determine whether driven EQS electrodes can couple into p-n junctions without making any direct electrical contact with the semiconducting bulk.\u00a0 Figure 1a shows a finite element simulation where AC driven electrodes manage to forward-bias a p-n junction to a depth of approximately 2\u03bcm from a scan height of 0.1\u03bcm.\u00a0 If electrodes are positioned so that they are located away from any junctions, then the current on these sensors will be linear and experience no harmonic distortion.\u00a0 However, if two of these electrodes are located over the top of a p-n junction, then they couple into that junction, causing harmonic distortion in the sensors\u2019 AC currents.\u00a0 Figure 2a shows an FFT of the center electrode\u2019s current from the array in Figure 1b when the sensors are driven by a 1GHz voltage; a strong harmonic distortion is witnessed.\u00a0 Figure 2b illustrates how the harmonic distortion experienced by the center electrode from Figure 1b is maximized when the sensors straddle the p-well junctions and diminishes to zero when sensors are no longer located above the p-well. A large array of these electrodes could scan over the surface of a semiconductor with the individual sensor currents monitored for harmonic distortion.\u00a0 This concept could then provide a new, fast-scanning method for mapping and imaging the semiconducting layers of an integrated circuit, where wells and junctions are located by looking for harmonic distortion in the sensor-current frequency spectrum.\u00a0 Though not shown here, such a system can also distinguish conducting and dielectric features.<\/p>\n