{"id":369,"date":"2010-06-23T11:08:34","date_gmt":"2010-06-23T15:08:34","guid":{"rendered":"https:\/\/wpmu2.mit.local\/?p=369"},"modified":"2010-08-09T09:55:55","modified_gmt":"2010-08-09T13:55:55","slug":"tomas-palacios","status":"publish","type":"post","link":"https:\/\/wpmu2.mit.local\/tomas-palacios\/","title":{"rendered":"Tom\u00e1s Palacios"},"content":{"rendered":"<div class=\"page-restrict-output\"><h3>Collaborators<\/h3>\n<ul>\n<li>F. Calle, ETSIT-UPM, Spain<\/li>\n<li>J. del Alamo, MIT<\/li>\n<li>P. Jarillo-Herrero, MIT<\/li>\n<li>D. Jena, University of Notre Dame<\/li>\n<li>J. Kong, MIT<\/li>\n<li>U. K. Mishra, University of California \u2013 Santa Barbara<\/li>\n<li>E. Monroy, CEA-Grenoble, France<\/li>\n<li>E. Munoz, ETSIT-UPM, Spain<\/li>\n<li>D. Perreault, MIT<\/li>\n<li>H. Xing, University of Notre Dame<\/li>\n<\/ul>\n<h3>Visiting Scientist<\/h3>\n<ul>\n<li>M. Azize, Post Doc, France<\/li>\n<\/ul>\n<p>Postdoctoral Associates<\/p>\n<ul>\n<li>M. Azize<\/li>\n<li>H. S. Lee<\/li>\n<li>K. Ryu<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>J. W. Chung, Research Assistant<\/li>\n<li>F. Gao, Research Assistant<\/li>\n<li>A. Hsu, Research Assistant<\/li>\n<li>D. S. Lee, Research Assistant<\/li>\n<li>B. Lu, Research Assistant<\/li>\n<li>B. Mailly, Research Assistant<\/li>\n<li>D. Piedra, Research Assistant<\/li>\n<li>O. I. Saadat, Research Assistant<\/li>\n<li>H. Wang, Research Assistant<\/li>\n<\/ul>\n<h3>Undergraduate Students<\/h3>\n<ul>\n<li>M. Medlock<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>E. Kubicki, Admin. Assistant II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>Wang, H., D. Nezich, J. Kong, and T. Palacios: \u201cGraphene Frequency Multipliers,\u201d Electron Dev. Letts., vol. 30, 547-549, 2009.<\/p>\n<p>Chung, J.W., Edwin L. Piner, and T. Palacios, \u201cN-face GaN\/AlGaN HEMTs Fabricated through Layer Transfer Technology\u201d, Electron Dev. Letters 30, 113-116, 2009.<\/p>\n<p>Chung, J. W., Lee, J.-K., Piner, E. L., and T. Palacios, \u201cSeamless On-Wafer Integration of Si (100) MOSFETs and GaN HEMTs,\u201d Electron Dev. Letts., vol. 30, 1015-1017, 2009.<\/p>\n<p>Palacios, T., \u201cBeyond the AlGaN\/GaN HEMT: New Concepts for High-Speed Transistors,\u201d Phys. Stat. Sol. (a), vol. 206, 1145, 2009. (Invited).<\/p>\n<p>Palacios, T., J.W. Chung, O. Saadat, and F. Mieville: \u201cGaN and Digital Electronics: A Way out of Moore\u2019s Law?\u201d Phys. Stat. Sol. (c), vol. 6, 136, 2009. (Invited)<\/p>\n<p>Chung, J. W., Saadat, O. I., Guo, S., and T. Palacios, \u201cGate-Recessed InAlN\/GaN HEMTs on SiC Substrate with Al2O3 Passivation,\u201d Electron Dev. Letts., vol. 30, 904-906, 2009.<\/p>\n<p>Saadat, O. I., Chung, J. W., Piner, E., and T. Palacios, \u201cGate-First AlGaN\/GaN HEMT Technology for High Frequency Applications,\u201d Electron Dev. Letts., vol. 30, 1254-1256, 2009.<\/p>\n<p>Chung, J. W., and T. Palacios: \u201cHeterogeneous Integration of Nitride and Si Electronics,\u201d Meeting of the American Physical Society, Pittsburg PA, p. 102, 16-20 March 2009. (Invited)<\/p>\n<p>Palacios, T.: \u201cGaN and Si on-wafer Integration: The Future of High Frequency and High Power Electronics?\u201d Connecticut Symposium on Microelectronics &amp; Optoelectronics, New Haven, CT, pp. 2a-2b, March 2009. (Invited)<\/p>\n<p>Palacios, T.: \u201cNew Applications for Graphene Electronics,\u201d The 6th US-Korea Nanoforum (Nanoelectronics and Its Integration with Applications), Las Vegas, NV, pp. 80-81, 28-29 April 2009. (Invited)<\/p>\n<p>Chung, J. W., O. I. Saadat, H. Wang, and T. Palacios, \u201cGaN Transistors: Redefining the Limits of Electronics,\u201d 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Malaga, Spain, pp. 2-6, 17-20 May 2009. (Invited)<\/p>\n<p>Wang, H., J. Wu, A. Hsu, D. Nezich, and T. Palacios, \u201cGraphene RF Electronics,\u201d IEEE International Microwave Symposium (IMS). Boston, MA, 1 page, June 2009. (Invited)<\/p>\n<p>Palacios, T., \u201cThe Challenges and Rewards of Industry\/University Collaborative Research,\u201d IEEE International Microwave Symposium (IMS). Boston, MA, 1 page, June 2009. (Invited)<\/p>\n<p>Palacios, T., J. W. Chung, and B. Lu, \u201cOn-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si,\u201d IEEE International Microwave Symposium (IMS). Boston, MA, 3 pages, June 2009. (Invited)<\/p>\n<p>Wang, H, J. W. Chung, X. Gao, S. Guo, and T. Palacios, \u201cAl2O3 Passivated Thin Barrier InAlN\/GaN HEMTs on SiC Substrate with Record Current Density and Transconductance,\u201d International Symposium on Compound Semiconductors (ISCS), Santa Barbara, CA, 2 pages, August 30 \u2013 September 2, 2009. (Invited).<\/p>\n<p>Chung, J. W., O. I. Saadat, H. Wang, and T. Palacios \u201cSub-mm wave applications of GaN Transistors,\u201d Compound Semiconductor Integrated Circuit Symposium (CSICS), Greensboro, NC, 4 pages, 11-14 October 2009. (Invited)<\/p>\n<p>Lu, B., and T. Palacios, \u201cSchottky-Drain Technology for High Breakdown Voltage AlGaN\/GaN HEMTs on Si Substrate,\u201d Int\u2019l Conference on Nitride Semiconductors, Jeju, South Korea, 2 pages, 18-23, 2009.<\/p>\n<p>Chung, J. W., O. Saadat, and T. Palacios, \u201cGate-recessed AlGaN\/GaN HEMT with a Record fmax of 300 GHz,\u201d Int\u2019l Conference on Nitride Semiconductors, Jeju Island, South Korea, 2 pages, 18-23 October 2009.<\/p>\n<\/div>","protected":false},"excerpt":{"rendered":"<div class=\"page-restrict-output\"><p>Design, fabrication and characterization of novel electronic devices in wide bandgap semiconductors; polarization and bandgap engineering; transistors for sub-mm wave power and digital applications; new ideas for power conversion and generation; interaction of biological systems with semiconductor materials and devices; nanowires and graphene \u2013based transistors.<\/p>\n<\/div>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[18,60],"_links":{"self":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/369"}],"collection":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/comments?post=369"}],"version-history":[{"count":3,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/369\/revisions"}],"predecessor-version":[{"id":2347,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/369\/revisions\/2347"}],"wp:attachment":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/media?parent=369"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/categories?post=369"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/tags?post=369"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}