{"id":344,"date":"2010-06-23T11:08:57","date_gmt":"2010-06-23T15:08:57","guid":{"rendered":"https:\/\/wpmu2.mit.local\/?p=344"},"modified":"2010-07-23T15:04:49","modified_gmt":"2010-07-23T19:04:49","slug":"judy-l-hoyt","status":"publish","type":"post","link":"https:\/\/wpmu2.mit.local\/judy-l-hoyt\/","title":{"rendered":"Judy L. Hoyt"},"content":{"rendered":"<div class=\"page-restrict-output\"><h3>Collaborators<\/h3>\n<ul>\n<li>Dimitri Antoniadis, EECS<\/li>\n<li>Karl Berggren, EECS<\/li>\n<li>Franz Kartner, EECS<\/li>\n<li>Rajeev Ram, EECS<\/li>\n<li>Michael Canonico, ASU<\/li>\n<li>Ted Lyszczarz, MIT Lincoln Labs<\/li>\n<li>Jung Yoon, MIT Lincoln Labs<\/li>\n<\/ul>\n<h3>Graduate Students<\/h3>\n<ul>\n<li>Nicole DiLello, EECS<\/li>\n<li>Leonardo Gomez, EECS<\/li>\n<li>Pouya Hashemi, EECS<\/li>\n<li>Meekyung Kim, DMSE<\/li>\n<li>Jamie Teherani, EECS<\/li>\n<\/ul>\n<h3>RESEARCH STAFF<\/h3>\n<ul>\n<li>Gary Riggott, Research Specialist<\/li>\n<li>Hyung-Seok Lee, Postdoctoral Scholar<\/li>\n<\/ul>\n<h3>Support Staff<\/h3>\n<ul>\n<li>Whitney Rokui, Administrative Assistant II<\/li>\n<\/ul>\n<h3>Publications<\/h3>\n<p>P. Hashemi, M. Kim, J. Hennessy, L. Gomez, D.A. Antoniadis and J.L. Hoyt, &#8220;Width-dependent hole mobility in top-down fabricated Si-core\/Ge-shell nanowire MOS\u00adFETs&#8221;, Appl. Phys. Lett. 96 (6), p. 063109, Feb. 2010.<\/p>\n<p>L. Gomez, P. Hashemi, and J.L. Hoyt, &#8220;Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs,\u201d IEEE Transactions on Electron Devices vol.56, no.11, pp.2644-2651, Nov. 2009.<\/p>\n<p>O.M. Nayfeh, J.L. Hoyt and D.A. Antoniadis, &#8220;Strained Si1-xGex\/Si Band-to-Band Tunneling Transis\u00adtors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switch\u00ading Behavior,\u201d IEEE Transactions on Electron Devices, vol. 56,\u00a0\u00a0 no. 10,\u00a0 pp. 2264-2669, Oct. 2009.<\/p>\n<p>P. Hashemi, L. Gomez, and J.L. Hoyt, &#8220;Gate-All-Around N-MOS\u00adFETs with Uniaxial Tensile Strain-Induced Performance Enhance\u00adment Scalable to Sub-10-nm Na\u00adnowire Diameter,&#8221; IEEE Electron Device Letters, Vol. 30, No. 4, pp. 401-403, April 2009.<\/p>\n<p>C.W. Holzwarth, R. Amatya, M. Araghchini, J. Birge, H. Byun, J. Chen, M. Dahlem, N.A. DiLello, F. Gan, J.L. Hoyt, E.P. Ippen, F.X. Kartner, A. Khilo, J. Kim, A. Mota\u00admedi, J.S. Orcutt, M. Park, M. Per\u00adrott, M. Popovic, R.J. Ram, H.I. Smith, G.R. Zhou, S.J. Spector, T. Lyszczarz, M.W. Geis, D.M. Len\u00adnon, J.U. Yoon, M. Grein, R.T. Schulein, S. Frolov, A. Hanjani, J. Shmulovich, \u201cHigh speed analog-to-digital conversion with silicon photonics,\u201d Proceedings of the SPIE v 7220, p 72200B (15 pp.), 2009.<\/p>\n<p>P. Hashemi, L. Gomez, M. Cano\u00adnico, and J.L. Hoyt, &#8220;Electron Transport in Gate-All-Around Un\u00adiaxial Tensile Strained-Si Nanowire n-MOSFETs&#8221;, IEEE IEDM, Dec., 2008, pp.865-868.<\/p>\n<p>C. Ni Chleirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, and J. L. Hoyt, \u201cThickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs,\u201d IEEE Trans. Elec\u00adtron Devices, Volume 55,\u00a0 Issue 10,\u00a0 Oct. 2008, pp. 2687 \u2013 2694.<\/p>\n<p>L. Gomez, P. Hashemi, and J.L. Hoyt, &#8220;Hole Velocity Enhancement in Sub-100nm Gate Length Strained-SiGe Channel p-MOS\u00adFETs on Insulator,&#8221; IEEE SOI Conference, New Paltz, NY, USA, October 2008.<\/p>\n<p>P. Hashemi, M. Canonico, J.K.W. Yang, L. Gomez, K.K. Berggren, and J. L. Hoyt, &#8220;Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Na\u00adnowires for Gate-All-Around n-MOSFETs,&#8221; ECS (Electrochemical\u00a0 Society) Transactions, Vol. 16, No. 10, p.p. 57-68, October 2008.<\/p>\n<p>M. Kim, O. Olubuyide, J. Yoon, and J. Hoyt, \u201cSelective Epitaxial Growth of Ge-on-Si for Photodiode Appli\u00adcations,\u201d ECS (Electrochemi\u00adcal\u00a0 Society) Transactions, Vol. 16, No. 10, pp. 837-847, October 2008.<\/p>\n<p>J.L. Hoyt, P. Hashemi, and L. Go\u00admez, &#8220;Prospects for Top-Down Fabricated Uniaxial Strained Na\u00adnowire MOSFETs, &#8221; in ECS Trans\u00adactions , Vol. 16, No. 10, p.p. 731-734, October 2008.<\/p>\n<p>O.M. Nayfeh, C. Ni Chleirigh, J. Hennessy, L. Gomez, J.L. Hoyt and D.A. Antoniadis, \u201cDesign of tunneling field-effect transistors using strained-silicon\/strained-germanium type-II staggered hete\u00adrojunctions,\u201d IEEE Electron Device Letters, v 29, n 9, Sept. 2008, p 1074-7.<\/p>\n<p>O.M. Nayfeh, C. Ni Chleirigh, J.L. Hoyt and D.A. Antoniadis, \u201cMea\u00adsurement of enhanced gate-con\u00adtrolled band-to-band tunneling in highly strained silicon-germanium diodes,\u201d IEEE Electron Device Letters, v 29, n 5, May 2008, p 468-70.<\/p>\n<p>C. Ni Chleirigh, XiaoRu Wang, G. Rimple, Yun Wang, N.D. Theo\u00addore, M. Canonico, and J.L. Hoyt, \u201cSuper critical thickness SiGe-channel heterostructure p-type metal-oxide-semiconductor field-effect transistors using laser spike annealing,\u201d Journal of Applied Physics, v 103, n 10, 15 May 2008, p 104501-1-4.<\/p>\n<p>P. Hashemi, L. Gomez, M. Cano\u00adnico, and J.L. Hoyt &#8220;Performance Enhancement in Uniaxially Tensile Strained-Si Gate-All-Around Na\u00adnowire n-MOSFETs&#8221;, presented at IEEE Device Research Confe\u00adrence (DRC 2008), Santa Barbara, CA, USA, p. 185, June 2008.<\/p>\n<p>L. Gomez, M. Canonico, M.K. Kim, P. Hashemi , and J.L. Hoyt, &#8220;Fabri\u00adcation of Strained-Si\/Strained-Ge Heterostructures on Insulator,&#8221; Journal of Electronic Materials, Vol. 37 (3), pp. 240-244, March 2008.<\/p>\n<\/div>","protected":false},"excerpt":{"rendered":"<div class=\"page-restrict-output\"><p>Fabrication and device physics of silicon-based heterostructures and nanostructures.  High mobility Si and Ge-channel MOSFETs, nanowire FETs, novel transistor structures, and silicon-germanium photodetectors for electronic\/photonic integrated circuits. <\/p>\n<\/div>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[80],"tags":[18,52],"_links":{"self":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/344"}],"collection":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/comments?post=344"}],"version-history":[{"count":2,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/344\/revisions"}],"predecessor-version":[{"id":2271,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/344\/revisions\/2271"}],"wp:attachment":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/media?parent=344"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/categories?post=344"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/tags?post=344"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}