{"id":2065,"date":"2010-07-14T12:59:56","date_gmt":"2010-07-14T16:59:56","guid":{"rendered":"https:\/\/wpmu2.mit.local\/?p=2065"},"modified":"2010-07-14T13:00:23","modified_gmt":"2010-07-14T17:00:23","slug":"thermal-imaging-microscopy-of-semiconductor-devices","status":"publish","type":"post","link":"https:\/\/wpmu2.mit.local\/thermal-imaging-microscopy-of-semiconductor-devices\/","title":{"rendered":"Thermal Imaging Microscopy of Semiconductor Devices"},"content":{"rendered":"
The thermoreflectance (TR) technique, shown in Figure 1(a), is utilized to examine thermal conductivity of 0.6% ErAs: N-type InGaAlAs thermoelectric elements with a thickness of 60 um and an area of 1 mm by 1 mm. By monitoring the small fractional change in the reflectance of blue light occurring when the temperature of the surface is modulated, we can achieve submicron spatial resolution and a temperature resolution of 10 mK [1<\/a>]<\/sup>. In this experiment, the temperature gradient is created by a thermoelectric heater\/cooler while the heat flux is measured with thermocouples. The temperature profile across the sample is shown in Figure 1(b). The non-linear temperature profile indicates that the thermal conductivity has changed across the sample during the long (24 hours) molecular beam epitaxy\u00a0(MBE) growth of the sample. The Al concentration could potentially explain the variation in thermal conductivity. Since any scratches or defects could introduce spurious noise and therefore errors to TR measurements, infrared (IR) lock-in thermography is further used to verify the data.<\/p>\n