{"id":2012,"date":"2010-07-14T10:32:44","date_gmt":"2010-07-14T14:32:44","guid":{"rendered":"https:\/\/wpmu2.mit.local\/?p=2012"},"modified":"2010-07-14T10:32:44","modified_gmt":"2010-07-14T14:32:44","slug":"co-axial-integration-of-iii-v-ridge-waveguide-gain-elements-with-sioxny-waveguides-on-silicon","status":"publish","type":"post","link":"https:\/\/wpmu2.mit.local\/co-axial-integration-of-iii-v-ridge-waveguide-gain-elements-with-sioxny-waveguides-on-silicon\/","title":{"rendered":"Co-axial Integration of III-V Ridge-waveguide Gain Elements with SiOx<\/sub>Ny<\/sub> Waveguides on Silicon"},"content":{"rendered":"
\"Figure<\/a>

Figure 1: A cartoon illustrating the recess-mounting and co-axial alignment approach to integrating III-V gain elements (edge-emitting in-plane laser diodes, EELs, and semiconductor optical amplifiers, SOAs) with silicon oxy-nitride waveguides on silicon integrated-circuit chips and silicon photonic integrated-circuits platforms.<\/p><\/div>\n

Our ongoing research integrating 1.55-\u00b5m III-V ridge waveguide gain elements (i.e., diode lasers and semiconductor optical amplifiers) co-axially aligned with and coupled to silicon oxy-nitride waveguides on silicon substrates has made significant strides in the past year.\u00a0 We are working towards the goal of co-axially coupling III-V laser diodes and semiconductor optical amplifiers with waveguides on Si wafers; to do so, we use techniques consistent with fabricating waveguides on Si-CMOS wafers and integrating the III-V gain elements after all standard front- and back-end Si processing has been completed.<\/p>\n

A novel micro-cleaving technique has been used to produce active ridge waveguide platelets on the order of 6 \u00b5m thick and 100 \u00b5m wide, with precisely controlled lengths (in the current work 300 \u00b1 1.25 \u00b5m) and very high-quality end facets.\u00a0 Typical ridge guide platelet lasers have thresholds under 30 mA.<\/p>\n

\"Figure<\/a>

Figure 2: A close-up photomicrograph showing the alignment between an InGaAsP\/InP ridge waveguide platelet and a buried silicon oxy-nitride waveguide. Coupling losses as low as 3 dB were measured. <\/p><\/div>\n

Passive micro-cleaved platelets have been integrated within dielectric recesses etched through the oxy-nitride (SiOx<\/sub>Ny<\/sub>) waveguides on a wafer so that the ridge and SiOx<\/sub>Ny<\/sub> waveguides are co-axially aligned.\u00a0 Transmission measurements indicate coupling losses are as low as 5 db with air filling the gaps between the waveguide ends, and measurements made through filled gaps indicate that the coupling losses can be reduced to below 1.5 dB with a high index (n = 2.2) dielectric fill.\u00a0 Simulations indicate that with further optimization of the mode profile in the III-V waveguide, the loss can be reduced to below 1 dB.<\/p>\n

We have also performed extensive device design and optimization for co-axial recess integration and have recently completed a comparison of co-axial coupling with the evanescently coupled III-V\/Si hybrid integration approach recently introduced by researchers at UCSB and Intel.\u00a0 The latter comparison revealed that the approach we have taken, co-axial end-fire coupling, and the UCSB\/Intel approach, vertical evanescent coupling, are complementary, with each optimal for certain applications.\u00a0 At the same time it pointed out a number of distinct advantages for co-axial coupling of recess-integrated platelet lasers including higher operating efficiency, smaller device footprint, greater flexibility in choice of materials, lower cost, higher modularity, and easier integration of different wavelength emitters [1<\/a>]<\/sup>.<\/p>\n

\r\nReferences
  1. C.G. Fonstad, J.J. Rumpler, E.R. Barkley, J.M. Perkins, and S. Famenini, \u201cRecess Integration of Micro-cleaved Laser Diode Platelets with Dielectric Wave-guides on Silicon,\u201d Proc. of the Novel In-plane Semiconductor Lasers Conference VII, Photonics West 2008. 8<\/em>, SPIE Conference Proc. vol. 6909, 2008, pp. 69090O-1 to 69090O-8, [↩<\/a>]<\/li><\/ol><\/div>","protected":false},"excerpt":{"rendered":"

    Our ongoing research integrating 1.55-\u00b5m III-V ridge waveguide gain elements (i.e., diode lasers and semiconductor optical amplifiers) co-axially aligned with…<\/p>\n<\/div>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[12],"tags":[50],"_links":{"self":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/2012"}],"collection":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/comments?post=2012"}],"version-history":[{"count":4,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/2012\/revisions"}],"predecessor-version":[{"id":2018,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/2012\/revisions\/2018"}],"wp:attachment":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/media?parent=2012"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/categories?post=2012"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/tags?post=2012"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}