<\/a>Figure 1: Film stress as a function of thickness. Under conditions of low atomic mobility, non-equiaxed columnar grains and high tensile stresses develop. Under conditions of high atomic mobility, equiaxed columnar grains and tensile or compressive stresses develop.<\/p><\/div>\n
The mechanical properties of thin films, especially residual stresses in as-deposited films, strongly influence the reliability and performance of microelectromechanical devices and systems. \u00a0Residual stresses can be as high as 1GPa and can be tensile or compressive, depending on the material, deposition technique, and, very sensitively, deposition conditions.\u00a0\u00a0 When evaporative deposition is used, the two broad categories of behavior occur (Figure 1).\u00a0 Type I is characterized by development of a high tensile stress that is retained during and after continued deposition.\u00a0 This behavior is common when materials are deposited at low temperatures relative to their melting temperature, e.g. among refractory metals and semiconductors. In Type II behavior, a tensile stress develops as the film first forms, but compressive stresses (as high as 200MPa) develop during continued deposition.\u00a0 This behavior is characteristic of materials with relatively low melting temperatures such as Au, Ag, and Al.<\/p>\n