{"id":1312,"date":"2010-07-02T13:47:44","date_gmt":"2010-07-02T17:47:44","guid":{"rendered":"https:\/\/wpmu2.mit.local\/?p=1312"},"modified":"2010-07-02T13:48:23","modified_gmt":"2010-07-02T17:48:23","slug":"advanced-substrate-engineering-integration-of-inp-lattice-constant-on-si","status":"publish","type":"post","link":"https:\/\/wpmu2.mit.local\/advanced-substrate-engineering-integration-of-inp-lattice-constant-on-si\/","title":{"rendered":"Advanced Substrate Engineering: Integration of InP Lattice Constant on Si"},"content":{"rendered":"<div class=\"page-restrict-output\"><p>Integration of the InP lattice constant with Si CMOS platforms is motivated by the monolithic interconnection of III\/V optoelectronic and electronic devices with the highly integrated Si logic. However, integration of InP on Si requires a comprehensive solution that addresses lattice mismatch, thermal expansion mismatch, IV\/III-V integration, and alloy engineering challenges.<\/p>\n<p>We investigated III\/V graded (\u00d1) buffers on 6\u02da offcut GaAs substrate in combination with 6\u02da offcut Ge-on-Insulator (GeOI) substrate to integrate the InP lattice constant on Si. First, we chose 6\u02da offcut GeOI as the substrate to accommodate the antiphase disorder in the IV\/III-V integration<sup>&nbsp;[<a href=\"#footnote_0_1312\" id=\"identifier_0_1312\" class=\"footnote-link footnote-identifier-link\" title=\"S. M. Ting and E. A. Fitzgerald, &ldquo;Metal-organic chemical vapor deposition of single domain GaAs on Ge\/GexSi1-x\/Si and Ge substrates,&rdquo; Journal of Applied Physics, vol. 87, pp. 2618-2628, Mar. 2000.\">1<\/a>]<\/sup> and established excellent GaAs epitaxy on the substrate with proper surface preparation. Then we investigated two approaches to integrate III\/V alloys up to InP lattice constant on 6\u02da offcut GaAs: GaAs\/\u00d1In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/\u00d1In<sub>y<\/sub>Ga<sub>1-y<\/sub>P\/InP and GaAs\/\u00d1GaAs<sub>1-x<\/sub>Sb<sub>x<\/sub>. For the GaAs\/\u00d1In<sub>x<\/sub>Ga<sub>1-x<\/sub>As\/\u00d1In<sub>y<\/sub>Ga<sub>1-y<\/sub>P\/InP approach, we demonstrated the integration of InP on 6\u02da offcut GaAs with threading dislocation density of 7.9&#215;10<sup>6<\/sup> \/cm<sup>2<\/sup> and surface roughness of 30.0 nm. The second approach used \u00d1GaAs<sub>1-x<\/sub>Sb<sub>x<\/sub> alloys with compositional grading of the Sb concentration. Graded mixed-anion GaAsSb alloys grown at 575\u00b0C did not exhibit phase separation, resulting in higher quality InP lattice constant films on GaAs than the first method. A GaAsSb alloy (with a grading rate ~ 1.06% strain\/um) lattice-matched to InP on 6\u00b0 offcut bulk GaAs with threading dislocation density of 4.7&#215;10<sup>6<\/sup> cm<sup>-2<\/sup> and roughness of 7.4 nm was demonstrated. The threading dislocation density of the GaAsSb graded buffer can be further lowered to 2.7&#215;10<sup>6<\/sup> cm<sup>-2<\/sup> if a lower grading rate (0.64% strain\/um) is used.<\/p>\n<style type='text\/css'>\n\t\t\t#gallery-1 {\n\t\t\t\tmargin: auto;\n\t\t\t}\n\t\t\t#gallery-1 .gallery-item {\n\t\t\t\tfloat: left;\n\t\t\t\tmargin-top: 10px;\n\t\t\t\ttext-align: center;\n\t\t\t\twidth: 50%;\t\t\t}\n\t\t\t#gallery-1 img {\n\t\t\t\tborder: 2px solid #cfcfcf;\n\t\t\t}\n\t\t\t#gallery-1 .gallery-caption {\n\t\t\t\tmargin-left: 0;\n\t\t\t}\n\t\t<\/style>\n<p>\t\t<!-- see gallery_shortcode() in wp-includes\/media.php --><\/p>\n<div id='gallery-1' class='gallery galleryid-1312'>\n<dl class='gallery-item'>\n<dt class='gallery-icon'>\n\t\t\t\t<a href='https:\/\/wpmu2.mit.local\/files\/2010\/07\/yang_li_fig1.jpg' title='Figure 1' rel=\"lightbox[1312]\"><img loading=\"lazy\" width=\"300\" height=\"244\" src=\"https:\/\/wpmu2.mit.local\/files\/2010\/07\/yang_li_fig1-300x244.jpg\" class=\"attachment-medium\" alt=\"Figure 1\" title=\"Figure 1\" \/><\/a>\n\t\t\t<\/dt>\n<dd class='gallery-caption'>\n\t\t\t\tFigure 1: An XTEM of 6&deg; offcut <br \/>GaAs\/\u2207InxGa<sub>1-x<\/sub>As\/\u2207In<sub>y<\/sub>Ga<sub>1-y<\/sub>P\/InP.\n\t\t\t\t<\/dd>\n<\/dl>\n<dl class='gallery-item'>\n<dt class='gallery-icon'>\n\t\t\t\t<a href='https:\/\/wpmu2.mit.local\/files\/2010\/07\/yang_li_fig2.jpg' title='Figure 2' rel=\"lightbox[1312]\"><img loading=\"lazy\" width=\"300\" height=\"236\" src=\"https:\/\/wpmu2.mit.local\/files\/2010\/07\/yang_li_fig2-300x236.jpg\" class=\"attachment-medium\" alt=\"Figure 2\" title=\"Figure 2\" \/><\/a>\n\t\t\t<\/dt>\n<dd class='gallery-caption'>\n\t\t\t\tFigure 2: An XTEM of 6\u02da offcut<br \/> GaAs\/\u2207GaAs<sub>1-x<\/sub>Sb<sub>x<\/sub>\/InP.\n\t\t\t\t<\/dd>\n<\/dl>\n<p><br style=\"clear: both\" \/><br \/>\n\t\t\t<br style='clear: both;' \/>\n\t\t<\/div>\n<hr>\r\nReferences<ol class=\"footnotes\"><li id=\"footnote_0_1312\" class=\"footnote\">S. M. Ting and E. A. Fitzgerald, \u201cMetal-organic chemical vapor deposition of single domain GaAs on Ge\/Ge<sub>x<\/sub>Si<sub>1-x<\/sub>\/Si and Ge substrates,\u201d Journal of Applied Physics, vol. 87, pp. 2618-2628, Mar. 2000. [<a href=\"#identifier_0_1312\" class=\"footnote-link footnote-back-link\">&#8617;<\/a>]<\/li><\/ol><\/div>","protected":false},"excerpt":{"rendered":"<div class=\"page-restrict-output\"><p>Integration of the InP lattice constant with Si CMOS platforms is motivated by the monolithic interconnection of III\/V optoelectronic and&#8230;<\/p>\n<\/div>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[8],"tags":[19,4140],"_links":{"self":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/1312"}],"collection":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/comments?post=1312"}],"version-history":[{"count":6,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/1312\/revisions"}],"predecessor-version":[{"id":1320,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/posts\/1312\/revisions\/1320"}],"wp:attachment":[{"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/media?parent=1312"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/categories?post=1312"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/wpmu2.mit.local\/wp-json\/wp\/v2\/tags?post=1312"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}