{"id":1052,"date":"2010-06-29T15:51:05","date_gmt":"2010-06-29T19:51:05","guid":{"rendered":"https:\/\/wpmu2.mit.local\/?p=1052"},"modified":"2010-07-15T13:12:01","modified_gmt":"2010-07-15T17:12:01","slug":"colloidal-pbs-quantum-dots-solar-cells-with-high-fill-factor","status":"publish","type":"post","link":"https:\/\/wpmu2.mit.local\/colloidal-pbs-quantum-dots-solar-cells-with-high-fill-factor\/","title":{"rendered":"Colloidal PbS Quantum Dots Solar Cells with High Fill Factor"},"content":{"rendered":"
We fabricate PbS colloidal quantum-dot (QD)-based solar cells using a fullerene derivative as the electron transporting layer (ETL).\u00a0 A thiol treatment and oxidation process are used to modify the morphology and electronic structure of the QD films, resulting in devices that exhibit an open-circuit voltage (VOC<\/sub>) of 0.47 V and a fill factor (FF) of 62%.\u00a0 These values are the highest among published VOC and FF for PbS and PbSe-QD-based solar cells to date. The power-conversion efficiency reaches 1.3% under 1-sun AM1.5 test conditions and 2.4% under monochromatic infrared (\u03bb = 1310 nm) illumination. A consistent mechanism for device operation is developed through a circuit model and experimental measurements, shedding light on new approaches to the optimization of solar-cell performance by engineering the interface between the QDs and the neighboring charge-transport layers.<\/p>\n